SI7309DN-T1-E3 Vishay, SI7309DN-T1-E3 Datasheet

MOSFET P-CH 60V 8A 1212-8

SI7309DN-T1-E3

Manufacturer Part Number
SI7309DN-T1-E3
Description
MOSFET P-CH 60V 8A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7309DN-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
115 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 30V
Power - Max
19.8W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.115 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.9 A
Power Dissipation
3200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-8A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
146mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7309DN-T1-E3TR
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 73434
S-83051-Rev. B, 29-Dec-08
Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Width)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 60
(V)
8
3.30 mm
D
7
D
0.146 at V
0.115 at V
6
PowerPAK 1212-8
D
Bottom View
Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
5
DS(on)
D
GS
GS
(Ω)
= - 4.5 V
J
1
= - 10 V
= 150 °C)
S
a, d
2
S
P-Channel 60-V (D-S) MOSFET
3
S
3.30 mm
4
I
G
D
- 8
- 8
(A)
a
A
= 25 °C, unless otherwise noted
Q
14.5 nC
Steady State
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• CCFL inverter
• Class D-amp
Symbol
Symbol
T
R
R
J
Available
with Small Size and Low 1.07 mm Profile
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
®
Power MOSFET
Typical
31
5
G
P-Channel MOSFET
- 55 to 150
- 3.9
- 3.1
- 2.7
3.2
2.1
Limit
± 20
- 7.8
19.8
12.7
- 60
- 20
- 15
- 8
- 8
11
b, c
b, c
a
b, c
b, c
a
b, c
S
D
Maximum
6.3
39
Vishay Siliconix
®
Package
Si7309DN
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7309DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free) Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7309DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73434 S-83051-Rev. B, 29-Dec- thru 1000 Si7309DN Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 125 150 100 ...

Page 5

... S-83051-Rev. B, 29-Dec-08 100 125 150 100 10 L · Time In Avalanche (s) A Single Pulse Avalanche Capability = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7309DN Vishay Siliconix 100 T - Case Temperature (°C) C Power Derating -3 10 www.vishay.com 125 150 5 ...

Page 6

... Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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