SI7309DN-T1-GE3 Vishay, SI7309DN-T1-GE3 Datasheet
SI7309DN-T1-GE3
Specifications of SI7309DN-T1-GE3
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SI7309DN-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free) Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...
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... Si7309DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 73434 S-83051-Rev. B, 29-Dec- thru 1000 Si7309DN Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 125 150 100 ...
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... S-83051-Rev. B, 29-Dec-08 100 125 150 100 10 L · Time In Avalanche (s) A Single Pulse Avalanche Capability = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7309DN Vishay Siliconix 100 T - Case Temperature (°C) C Power Derating -3 10 www.vishay.com 125 150 5 ...
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... Si7309DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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