MOSFET N-CH 250V 15.6A TO-220F

FQPF16N25C

Manufacturer Part NumberFQPF16N25C
DescriptionMOSFET N-CH 250V 15.6A TO-220F
ManufacturerFairchild Semiconductor
SeriesQFET™
FQPF16N25C datasheet
 

Specifications of FQPF16N25C

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs270 mOhm @ 7.8A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C15.6AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs53.5nC @ 10VInput Capacitance (ciss) @ Vds1080pF @ 25V
Power - Max43WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.27 Ohms
Forward Transconductance Gfs (max / Min)10.5 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current15.6 A
Power Dissipation43 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FQP16N25C/FQPF16N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
TO-220
G
D
S
FQP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation (T
D
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θJS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2004 Fairchild Semiconductor Corporation
Features
• 15.6A, 250V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
D
G
S
FQPF Series
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C)
C
Parameter
QFET
= 0.27Ω @V
= 10 V
DS(on)
GS
D
G
S
FQP16N25C
FQPF16N25C
Units
250
15.6
15.6 *
9.8
9.8 *
62.4
62.4 *
± 30
410
mJ
15.6
13.9
mJ
5.5
V/ns
139
43
1.11
0.34
W/°C
-55 to +150
300
FQP16N25C
FQPF16N25C
Units
0.9
2.89
°C/W
0.5
--
°C/W
62.5
62.5
°C/W
Rev. A, March 2004
®
V
A
A
A
V
A
W
°C
°C

FQPF16N25C Summary of contents

  • Page 1

    ... S FQP16N25C FQPF16N25C Units 250 15.6 15.6 * 9.8 9.8 * 62.4 62.4 * ± 30 410 mJ 15.6 13.9 mJ 5.5 V/ns 139 43 1.11 0.34 W/°C -55 to +150 300 FQP16N25C FQPF16N25C Units 0.9 2.89 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, March 2004 ® °C °C ...

  • Page 2

    ... G ≤ 15.6A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

  • Page 3

    ... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C oss 1000 C rss ※ Notes : 500 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation Notes : ※ 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ Note : ℃ ...

  • Page 4

    ... Notes : Single Pulse - Figure 9-2. Maximum Safe Operating Area 100 125 150 ℃ Notes : ※ 7 - 100 150 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on) 10 µ s 100 µ 150 Drain-Source Voltage [V] DS for FQPF16N25C Rev. A, March 2004 200 ...

  • Page 5

    ... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP16N25C Figure 11-2. Transient Thermal Response Curve for FQPF16N25C ©2004 Fairchild Semiconductor Corporation (Continued ※ θ ※ ℃ θ ℃ θ θ Rev. A, March 2004 ...

  • Page 6

    ... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

  • Page 7

    ... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 8

    ... Package Dimensions ©2004 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters Rev. A, March 2004 ...

  • Page 9

    ... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2004 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2004 ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...