FQPF16N25C Fairchild Semiconductor, FQPF16N25C Datasheet - Page 3

MOSFET N-CH 250V 15.6A TO-220F

FQPF16N25C

Manufacturer Part Number
FQPF16N25C
Description
MOSFET N-CH 250V 15.6A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF16N25C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
15.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53.5nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Forward Transconductance Gfs (max / Min)
10.5 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15.6 A
Power Dissipation
43 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2004 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
500
10
10
10
0
1.5
1.0
0.5
0.0
10
-1
1
0
10
-1
Figure 5. Capacitance Characteristics
0
Figure 3. On-Resistance Variation vs
-1
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
1. V
2. f = 1 MHz
Notes :
Drain Current and Gate Voltage
GS
= 0 V
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
D
0
, Drain Current [A]
0
20
C
C
C
oss
rss
iss
V
GS
= 10V
30
C
C
C
1. 250µ s Pulse Test
2. T
iss
oss
rss
Notes :
= C
= C
= C
10
C
10
= 25 ℃
gs
gd
ds
1
1
+ C
+ C
Note : T
gd
gd
40
(C
V
ds
GS
= shorted)
J
= 20V
= 25 ℃
50
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
o
C
0.4
Variation with Source Current
150
o
10
C
150 ℃
0.6
4
V
V
Q
GS
SD
and Temperature
G
, Gate-Source Voltage [V]
25 ℃
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
DS
0.8
= 200V
20
V
-55
DS
o
V
= 125V
C
DS
1.0
6
= 50V
30
1.2
1. V
2. 250µ s Pulse Test
Notes :
1. V
2. 250µ s Pulse Test
DS
1.4
8
Notes :
= 40V
GS
Note : I
= 0V
40
D
1.6
= 15.6A
Rev. A, March 2004
10
1.8
50

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