FQPF3N80C Fairchild Semiconductor, FQPF3N80C Datasheet
FQPF3N80C
Manufacturer Part Number
FQPF3N80C
Description
MOSFET N-CH 800V 3A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF3N80CYDTU.pdf
(10 pages)
Specifications of FQPF3N80C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
705pF @ 25V
Power - Max
39W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 Ohms
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
39 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N80C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQPF3N80C
Manufacturer:
Fairchi/ON
Quantity:
17 441
Part Number:
FQPF3N80C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FQPF3N80C/10N60C/5N60C
Manufacturer:
FSC原装
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Implementation of change:
Expected 1st Device Shipment Date: 2007/08/26
Earliest Year/Work Week of Changed Product: H35
Change Type Description: Passivation Material, Fab Process Change
Description of Change (From): There are no passivation layer.
Description of Change (To): Adding Passivation layer on front metal.
Reason for Change : To improve product quality.
Qual/REL Plan Numbers : Q20070212
All items were passed.
Qualification :
All items were passed.
Results/Discussion
Test: (Autoclave)
Lot
Q20070212AAACLV
Q20070212ABACLV
Q20070212ACACLV
Test: (High Temperature Gate Bias)
Lot
Q20070212AAHTGB
Q20070212AAHTGB
Q20070212ABHTGB
Q20070212ABHTGB
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
500-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
Date Issued On : 2007/06/26
Date Created : 2007/05/17
Failure Code
Failure Code
PCN# : Q2072004
Pg. 1
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FQPF3N80C Summary of contents
Page 1
... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...
Page 2
... FQA11N90C_F109 FQA8N100C FQA9N90C FQB5N60CTM_NL FQB8N60CFTM FQD5N60CTF FQD5N60CTM_WS FQD6N60CTM FQI6N60CTU FQP3N80C_NL FQP5N60C_F080 FQP6N80C FQP8N60C FQP8N60C_F105 FQP8N90C FQPF3N80CYDTU FQPF5N60C FQPF6N60C FQPF6N90C FQPF8N60C FQPF8N60CYDTU FQPF8N80CXDTU FQPF9N90C Failure Code 1000-HOURS Failure Code 0/77 0/77 0/77 Failure Code FQA6N90C_F109 FQA8N80C_F109 FQA9N90C_F109 FQB5N60CTM_WS ...