IRF530A Fairchild Semiconductor, IRF530A Datasheet

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IRF530A

Manufacturer Part Number
IRF530A
Description
MOSFET N-CH 100V 14A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRF530A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 25V
Power - Max
55W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF530A
Manufacturer:
FSC
Quantity:
700
Part Number:
IRF530A
Manufacturer:
IR
Quantity:
12 500
©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Symbol
Symbol
Improved Gate Charge
Extended Safe Operating Area
175
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Lower Leakage Current : 10
Lower R
J
R
R
R
dv/dt
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
CS
JC
D
L
JA
C
STG
Operating Temperature
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.092
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
Case-to-Sink
A (Max.) @ V
C
=25 )
C
C
=25 )
=100 )
C
DS
C
C
= 100V
O
O
O
O
O
1
2
1
1
3
Typ.
0.5
--
--
- 55 to +175
+ _
Value
0.36
300
100
261
BV
R
I
20
9.9
5.5
6.5
1
14
56
14
55
2
TO-220
D
3
1.Gate 2. Drain 3. Source
DS(on)
= 14 A
DSS
IRF530A
Max.
2.74
62.5
--
= 0.11
= 100 V
Units
Units
W/
C
V/ns
mJ
mJ
W
/W
V
A
A
V
A
C
C
Rev. B

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IRF530A Summary of contents

Page 1

... Maximum Lead Temp. for Soldering T L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol R Junction-to-Case Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation A (Max 100V DS Characteristic = =100 ) = Characteristic Case-to-Sink IRF530A BV = 100 V DSS R = 0.11 DS(on TO-220 1.Gate 2. Drain 3. Source Value Units V 100 261 5.5 6 ...

Page 2

... IRF530A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss iss rss oss rss Drain-Source Voltage [V] DS Fig 2. Transfer Characteristics 175 Fig 4. Source-Drain Diode Forward Voltage Fig 6. Gate Charge vs. Gate-Source Voltage = IRF530A @ Notes : 250 s Pulse Test Gate-Source Voltage [ Source-Drain Voltage [ Total Gate Charge [nC ...

Page 4

... IRF530A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area is Limited DS(on Notes : 175 Single Pulse - Drain-Source Voltage [V] DS D=0 0.2 0.1 0. 0.02 0. Fig 8. On-Resistance vs. Temperature 3.0 2.5 2.0 1 ...

Page 5

... Vary t to obtain I p required peak DUT 10V t p Fig 12. Gate Charge Test Circuit & Waveform V GS Same Type as DUT 10V V DS DUT Current Sampling ( Resistor out 0.5 rated 10 DSS IRF530A Charge 90 d(on) r d(off off BV DSS 1 ---- 2 -------------------- DSS DD I (t) D Time (t) DS ...

Page 6

... IRF530A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period I , Body Diode Forward Current Body Diode Reverse Current ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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