FQPF15P12 Fairchild Semiconductor, FQPF15P12 Datasheet

MOSFET P-CH 120V 15A TO-220F

FQPF15P12

Manufacturer Part Number
FQPF15P12
Description
MOSFET P-CH 120V 15A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF15P12

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
120V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
41W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
9.5 S
Drain-source Breakdown Voltage
- 120 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF15P12
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2003 Fairchild Semiconductor Corporation
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -15A, -120V, R
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
TO-220F
FQPF Series
FQP15P12
FQP15P12
-10.6
0.67
DS(on)
62.5
100
-15
-60
1.5
40
-55 to +175
= 0.2 @V
1157
-120
-5.0
300
-15
10
30
G
FQPF15P12
FQPF15P12
! ! ! !
! ! ! !
GS
QFET
-10.6 *
-15 *
-60 *
0.27
62.5
3.66
41
--
= -10 V
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
S
! ! ! !
! ! ! !
D
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A, December 2003
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

Related parts for FQPF15P12

FQPF15P12 Summary of contents

Page 1

... D FQP15P12 FQPF15P12 Units -120 -15 -15 * -10.6 -10.6 * -60 - 1157 mJ - -5.0 V/ns 100 41 0.67 0.27 W/°C -55 to +175 300 FQP15P12 FQPF15P12 Units 1.5 3.66 °C °C/W 62.5 62.5 °C/W Rev. A, December 2003 ® °C °C ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 6.0mH -15A -50V -15A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 -250 A, Referenced to 25° -120 - 150° ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2200 C 2000 oss 1800 C iss 1600 1400 1200 1000 C rss 800 600 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ -10V -20V GS ※ ...

Page 4

... Figure 8. On-Resistance Variation 2 10 100 Figure 9-2. Maximum Safe Operating Area 125 150 175 ※ Notes : - -7 - 100 150 200 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on) 100 ※ Notes : 175 Single Pulse Drain-Source Voltage [V] DS for FQPF15P12 Rev. A, December 2003 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP15P12 Figure 11-2. Transient Thermal Response Curve for FQPF15P12 ©2003 Fairchild Semiconductor Corporation (Continued) ※ ※ tio ℃ θ θ ( ℃ θ (t) θ Rev. A, December 2003 ...

Page 6

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2003 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, December 2003 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2003 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, December 2003 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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