FDD6685 Fairchild Semiconductor, FDD6685 Datasheet

MOSFET P-CH 30V 11A DPAK

FDD6685

Manufacturer Part Number
FDD6685
Description
MOSFET P-CH 30V 11A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6685

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 5V
Input Capacitance (ciss) @ Vds
1715pF @ 15V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.02 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
11 A
Power Dissipation
52000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
21 ns
Rise Time
11 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6685
FDD6685TR

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FDD6685
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
D
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
J
DSS
GSS
D
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
, T
JC
JA
JA
STG
Semiconductor’s
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
G
S
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
TO-252
advanced
Parameter
D
Pulsed, PW
PowerTrench
@T
C
A
=25°C
=25°C
T
A
=25
o
C unless otherwise noted
100µs
certification.
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 3)
(Note 1)
(Note 1)
Features
–40 A, –30 V. R
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
Qualified to AEC Q101
low R
DS(ON)
G
R
DS(ON)
DS(ON)
Ratings
55 to +175
3.8
1.6
2.9
52
40
96
100
25
30
40
11
= 20 m @ V
= 30 m
S
D
February 2004
@ V
GS
GS
= –10 V
= –4.5 V
FDD6685 Rev D (W)
Units
C/W
C/W
C/W
W
V
V
A
C

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FDD6685 Summary of contents

Page 1

... C @T =25°C (Note 1a) A Pulsed, PW 100µs (Note 1b) (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) (Note 1b) certification. February 2004 = –10 V DS(ON –4.5 V DS(ON Ratings Units – – 40 – – 100 W 52 3.8 1.6 – +175 2.9 C/W 40 C/W 96 C/W FDD6685 Rev D (W) ...

Page 2

... MHz – – – GEN V = –15V – – –3.2 A (Note –11 A, diF/dt = 100 A/µs Quantity 2500 units Min Typ Max Units 42 mJ –11 A –30 V –24 mV/ C –1 A ±100 nA –1 –1.8 – mV – 1715 pF 440 pF 225 pF 3 –0.8 –1 FDD6685 Rev D (W) ...

Page 3

... Starting T = 25° 0.69mH –11A 25°C unless otherwise noted A is determined by the user's board design 40°C/W when mounted 1in pad copper where P is maximum power dissipation 25°C and 96°C/W when mounted minimum pad and V = 10V. DS(on) J(max) GS FDD6685 Rev D (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.0V -4.5V -5.0V -6.0V -8.0V -10V DRAIN CURRENT ( -5. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6685 Rev D ( 1.4 ...

Page 5

... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk ( Duty Cycle 100 1000 FDD6685 Rev D (W) 30 1000 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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