FQP3P50 Fairchild Semiconductor, FQP3P50 Datasheet - Page 4

MOSFET P-CH 500V 2.7A TO-220

FQP3P50

Manufacturer Part Number
FQP3P50
Description
MOSFET P-CH 500V 2.7A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP3P50

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.9 Ohm @ 1.35A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
85W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
4.9 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.35 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.7 A
Power Dissipation
85000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.7A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
4.9ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQP3P50
Manufacturer:
TI/NSC
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Part Number:
FQP3P50
Manufacturer:
FAIRCHILD/仙童
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Part Number:
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©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
10
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1 0
1 0
※ Notes :
1
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
D = 0 . 5
0 .0 2
0 .0 1
0 .0 5
o
C
0 .2
o
0 .1
50
C
DS(on)
Figure 11. Transient Thermal Response Curve
DC
100
10
1 0
(Continued)
10 ms
2
o
- 4
C]
s in g le p u ls e
※ Notes :
1 ms
1. V
2. I
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
100 s
150
= 0 V
1 0
- 3
200
10
3
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
- T
( t ) = 1 . 4 7 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
T
J
t
D M
, Junction Temperature [
1
C
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
1
75
/t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -1.35 A
= -10 V
Rev. A, August 2000
200
150

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