FQP3P50 Fairchild Semiconductor, FQP3P50 Datasheet - Page 8

• Manufacturer Part Number: FQP3P50
• Description: MOSFET P-CH 500V 2.7A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP3P50

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 Ohm @ 1.35A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 4.9 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.35 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 4.9ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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ACEx™
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CROSSVOLT™
E
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2
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®
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Definition
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Rev.E