FQPF22P10 Fairchild Semiconductor, FQPF22P10 Datasheet

MOSFET P-CH 100V 13.2A TO-220F

FQPF22P10

Manufacturer Part Number
FQPF22P10
Description
MOSFET P-CH 100V 13.2A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF22P10

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohms
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
13.2 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF22P10
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF22P10
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQPF22P10
Quantity:
4 000
©2002 Fairchild Semiconductor Corporation
FQPF22P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
D
S
C
Parameter
= 25°C)
Parameter
T
TO-220F
FQPF Series
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -13.2A, -100V, R
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G
Typ
--
--
DS(on)
FQPF22P10
-55 to +175
-13.2
-52.8
-13.2
-100
-9.3
710
-6.0
300
4.5
0.3
= 0.125
D
45
S
30
Max
62.5
3.3
QFET
@V
GS
= -10 V
Rev. B, August 2002
Units
W/°C
Units
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF22P10 Summary of contents

Page 1

... TO-220F S FQPF Series T = 25°C unless otherwise noted C Parameter = 25° 100°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter QFET = 0.125 @V = -10 V DS(on FQPF22P10 Units -100 V -13.2 A -9.3 A -52 710 mJ -13.2 A 4.5 mJ -6.0 V/ 0.3 W/°C -55 to +175 °C 300 °C ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 6.1mH -13.2A -25V ≤ -22A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -100 ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3500 3000 C iss 2500 C oss 2000 1500 C rss 1000 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 1 10 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ 10V ※ Note : T = 25℃ ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 15 12 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT 10% 10% DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2002 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. B, August 2002 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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