ZXMN10A25GTA Diodes Zetex, ZXMN10A25GTA Datasheet

MOSFET N-CHAN 100V SOT223

ZXMN10A25GTA

Manufacturer Part Number
ZXMN10A25GTA
Description
MOSFET N-CHAN 100V SOT223
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN10A25GTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
859pF @ 50V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN10A25G
ZXMN10A25GTATR
ZXMN10A25GTR
ZXMN10A25GTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10A25GTA
Manufacturer:
DIODES/美台
Quantity:
20 000
ZXMN10A25G
100V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure which combininthe benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
10A25
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
Device
ZXMN10A25GTA
Low on-resistance
Fast switching speed
Low gate drive
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
V
(BR)DSS
100
0.125 @ V
0.150 @ V
R
Reel size
(inches)
DS(on)
7
GS
GS
( )
= 10V
= 6V
Tape width
(mm)
12
I
D
3.7
4
(A)
1
Quantity
per reel
1,000
D
Pinout - top view
www.zetex.com
G
D
S
G
S
D

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ZXMN10A25GTA Summary of contents

Page 1

... Low gate drive • SOT223 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN10A25GTA 7 Device marking ZXMN 10A25 Issue 1 - July 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 3.7 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

Page 3

Thermal characteristics Issue 1 - July 2006 © Zetex Semiconductors plc 2006 ZXMN10A25G 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical Characteristics Issue 1 - July 2006 © Zetex Semiconductors plc 2006 ZXMN10A25G 5 www.zetex.com ...

Page 6

Typical Characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 1 - July 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 1 - July 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN10A25G www.zetex.com ...

Page 8

Package outline - SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas ...

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