FQPF33N10 Fairchild Semiconductor, FQPF33N10 Datasheet

MOSFET N-CH 100V 18A TO-220F

FQPF33N10

Manufacturer Part Number
FQPF33N10
Description
MOSFET N-CH 100V 18A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF33N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
52 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
41W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.052 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
18 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF33N10
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF33N10
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FQPF33N10L
Manufacturer:
FSC
Quantity:
5 510
Part Number:
FQPF33N10L
Manufacturer:
PANASONIC
Quantity:
50 000
Part Number:
FQPF33N10L
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
FQPF33N10L
Quantity:
3 000
©2000 Fairchild Semiconductor International
FQPF33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings 
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
Parameter
= 25°C)
 T
C
FQPF Series
C
C
TO-220F
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 18A, 100V, R
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 62 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G
!
!
DS(on)
Typ
--
--
! "
! "
FQPF33N10
-55 to +175
= 0.052
!
!
!
!
S
D
"
"
"
"
"
"
12.7
0.27
100
430
300
4.1
6.0
18
72
18
41
25
@V
Max
3.70
62.5
GS
QFET
QFET
QFET
QFET
= 10 V
April 2000
Units
W/°C
Units
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQPF33N10

FQPF33N10 Summary of contents

Page 1

... C Parameter April 2000 QFET QFET QFET QFET = 0.052 @ DS(on " " ! " ! " G " " " " FQPF33N10 Units 100 18 12.7 72 25 430 18 4.1 6.0 41 0.27 W/°C -55 to +175 300 Typ Max Units -- 3. V/ns W ° ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 2mH 18A 25V 33A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 100 ...

Page 3

... V GS 0.05 0. Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 2500 2000 C iss C oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 10V GS = 20V Note : 100 120 shorted) iss gs gd ...

Page 4

... Figure 7. Breakdown Voltage Variation vs. Temperature Operation in This Area is Limited by R DS(on Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  0.5 D 0.0 -100 100 150 200 100 100 Figure 11 ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2000 Fairchild Semiconductor International TO-220F ø3.18 0.20 0.10 (7.00) (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Rev. A, April 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

Related keywords