FQPF9P25 Fairchild Semiconductor, FQPF9P25 Datasheet

MOSFET P-CH 250V 6A TO-220F

FQPF9P25

Manufacturer Part Number
FQPF9P25
Description
MOSFET P-CH 250V 6A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF9P25

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
620 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.62 Ohms
Forward Transconductance Gfs (max / Min)
4.8 S
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF9P25
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF9P25
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FQPF9P25
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQPF9P25YDTU
Quantity:
4 500
©2000 Fairchild Semiconductor International
FQPF9P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
resistance,
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
provide
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
superior
Parameter
= 25°C)
Parameter
T
C
FQPF Series
C
C
switching
TO-220F
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -6.0A, -250V, R
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
! ! ! !
! ! ! !
Typ
--
--
DS(on)
-55 to +150
FQP9P25
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
= 0.62
-250
-6.0
-3.9
650
-6.0
-5.5
300
-24
5.0
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
0.4
50
30
@V
Max
62.5
2.5
QFET
QFET
QFET
QFET
GS
December 2000
= -10 V
Rev. A2, December 2000
Units
W/°C
Units
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF9P25 Summary of contents

Page 1

... FQPF9P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 28.9mH -6.0A -50V -9.4A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -250 -200 125° ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2400 2000 1600 C iss C 1200 oss 800 C rss 400 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ J ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 6 5 100 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2000 Fairchild Semiconductor International TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Rev. A2, December 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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