FQPF11N40C Fairchild Semiconductor, FQPF11N40C Datasheet

MOSFET N-CH 400V 10.5A TO-220F

FQPF11N40C

Manufacturer Part Number
FQPF11N40C
Description
MOSFET N-CH 400V 10.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF11N40C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
530 mOhm @ 5.25A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1090pF @ 25V
Power - Max
44W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.53 Ohms
Forward Transconductance Gfs (max / Min)
7.1 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
44 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Price
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Quantity:
12 500
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Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FQP11N40C/FQPF11N40C Rev. C1
FQP11N40C/FQPF11N40C
400V N-Channel MOSFET
Features
• 10.5 A, 400V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
Symbol
Symbol
J
L
DSS
GSS
AS
AR
D
TJC
TCS
TJA
, T
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
D
S
DS(on)
=
0.5 : @V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
TO-220
FQP Series
C
Parameter
Parameter
= 25°C)
GS
= 10 V
C
C
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
FQP11N40C
FQP11N40C
TO-220F
FQPF Series
10.5
1.07
0.93
62.5
135
6.6
0.5
42
-55 to +150
r 30
13.5
400
360
300
4.5
11
FQPF11N40C
FQPF11N40C
G
{
{
10.5 *
6.6 *
0.35
2.86
62.5
42 *
44
--
{
{
{
{
D
S
www.fairchildsemi.com
August 2010
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
A
V
A
A
V
A
®

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FQPF11N40C Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink Typ. TCS R Thermal Resistance, Junction-to-Ambient TJA ©2010 Fairchild Semiconductor Corporation FQP11N40C/FQPF11N40C Rev. C1 Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature = 25 : Starting 5.7 mH 10.5A 50V 10.5A, di/dt d 200A/Ps Starting DSS, 4. Pulse Test : Pulse width d 300Ps, Duty cycle Essentially independent of operating temperature FQP11N40C/FQPF11N40C Rev. C1 Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Test Conditions = 250 250 PA, Referenced to 25°C ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 1800 1600 1400 C iss 1200 C oss 1000 800 600 C rss 400 200 Drain-Source Voltage [V] DS FQP11N40C/FQPF11N40C Rev. C1 Figure 2. Transfer Characteristics Notes : P 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 20V GS q Note : ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current Case Temperature [ C FQP11N40C/FQPF11N40C Rev. C1 (Continued) Figure 8. On-Resistance Variation Notes : 250 A D 100 150 200 q C] Figure 9-2. Maximum Safe Operating Area 100 100 125 150 vs. Temperature 3.0 2.5 2.0 1 ...

Page 5

... Typical Performance Characteristics Figure 11-1. ransient Thermal Response Curve of FQP3N50C Figure 11-2. ransient Thermal Response Curve of FQPF3N50C FQP11N40C/FQPF11N40C Rev. C1 (Continued www.fairchildsemi.com ...

Page 6

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FQP11N40C/FQPF11N40C Rev. C1 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQP11N40C/FQPF11N40C Rev. C1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 8

... Mechanical Dimensions FQP11N40C/FQPF11N40C Rev. C1 TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions FQP11N40C/FQPF11N40C Rev. C1 (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQP11N40C/FQPF11N40C Rev. C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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