MOSFET N-CH 30V 160A D-PAK

FDD8870

Manufacturer Part NumberFDD8870
DescriptionMOSFET N-CH 30V 160A D-PAK
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDD8870 datasheet
 


Specifications of FDD8870

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs3.9 mOhm @ 35A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C160AVgs(th) (max) @ Id2.5V @ 250µA
Gate Charge (qg) @ Vgs118nC @ 10VInput Capacitance (ciss) @ Vds5160pF @ 15V
Power - Max160WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0039 Ohm @ 10 V
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current21 APower Dissipation160000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDD8870 / FDU8870
N-Channel PowerTrench
30V, 160A, 3.9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(ON)
Applications
• DC/DC converters
D
G
S
D-PAK
TO-252
(TO-252)
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GS
Drain Current
o
Continuous (T
= 25
C
o
I
Continuous (T
= 25
D
C
Continuous (T
= 25
amb
Pulsed
E
Single Pulse Avalanche Energy (Note 2)
AS
Power dissipation
P
D
o
Derate above 25
C
T
, T
Operating and Storage Temperature
J
STG
Thermal Characteristics
R
Thermal Resistance Junction to Case TO-252, TO-251
JC
R
Thermal Resistance Junction to Ambient TO-252, TO-251
JA
R
Thermal Resistance Junction to Ambient TO-252, 1in
JA
©2008 Fairchild Semiconductor Corporation
®
MOSFET
Features
• r
= 3.9m , V
DS(ON)
• r
= 4.4m , V
DS(ON)
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
• High power and current handling capability
I-PAK
(TO-251AA)
G D S
T
= 25°C unless otherwise noted
C
Parameter
C, V
= 10V) (Note 1)
GS
C, V
= 4.5V) (Note 1)
GS
o
o
C, V
= 10V, with R
= 52
C/W)
GS
JA
2
copper pad area
April 2008
tm
= 10V, I
= 35A
GS
D
= 4.5V, I
= 35A
GS
D
D
G
S
Ratings
Units
30
V
20
V
160
A
150
A
21
A
Figure 4
A
690
mJ
160
W
o
1.07
W/
C
o
-55 to 175
C
o
0.94
C/W
o
100
C/W
o
52
C/W
FDD8870 / FDU8870 Rev. C2

FDD8870 Summary of contents

  • Page 1

    ... I-PAK (TO-251AA 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with C/ copper pad area April 2008 tm = 10V 35A 4.5V 35A Ratings Units 160 A 150 Figure 4 A 690 mJ 160 -55 to 175 C o 0.94 C/W o 100 C C/W FDD8870 / FDU8870 Rev. C2 ...

  • Page 2

    ... 27V 10V Tape Width Quantity 13” 12mm 2500 units N/A 75 units Min Typ Max 150 250 100 1.2 - 2.5 - 0.0032 0.0039 - 0.0036 0.0044 - 0.0051 0.0063 - 5160 - - 990 - - 590 - - 2 118 - 15V 6.5 = 35A - 1.0mA - 139 - 189 - - 1. 1 FDD8870 / FDU8870 Rev. C2 Units ...

  • Page 3

    ... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8870 / FDU8870 Rev. C2 175 ...

  • Page 4

    ... Resistance vs Junction Temperature o STARTING STARTING T = 150 (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS TIME IN AVALANCHE (ms) AV Capability 10V 2. PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.2 0 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD8870 / FDU8870 Rev. C2 100 = 0.6 = 35A D 200 ...

  • Page 5

    ... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current FDD8870 / FDU8870 Rev. C2 200 100 ...

  • Page 6

    ... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8870 / FDU8870 Rev 10V 90% ...

  • Page 7

    ... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8870 / FDU8870 Rev. C2 ...

  • Page 8

    ... PSPICE Electrical Model .SUBCKT FDD8870 rev July 2003 4.2e 4.2e-9 Cin 6 8 4.7e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 32.7 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2e-9 RLgate RLdrain ...

  • Page 9

    ... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD8870 / FDU8870 Rev. C2 DRAIN 2 SOURCE 3 ...

  • Page 10

    ... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD8870 / FDU8870 Rev. C2 ...

  • Page 11

    ... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDD8870 / FDU8870 Rev. C2 ® Rev. I34 ...