FDD8870 Fairchild Semiconductor, FDD8870 Datasheet

MOSFET N-CH 30V 160A D-PAK

FDD8870

Manufacturer Part Number
FDD8870
Description
MOSFET N-CH 30V 160A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8870

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.9 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
118nC @ 10V
Input Capacitance (ciss) @ Vds
5160pF @ 15V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0039 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8870
Manufacturer:
FSC
Quantity:
200 000
©2008 Fairchild Semiconductor Corporation
FDD8870 / FDU8870
N-Channel PowerTrench
30V, 160A, 3.9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
STG
and fast switching speed.
G
S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
(TO-252)
D-PAK
TO-252
amb
C
C
= 25
= 25
o
C
D
= 25
o
o
C, V
C, V
o
C, V
®
GS
GS
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
T
= 10V, with R
C
= 25°C unless otherwise noted
G D S
JA
= 52
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
r
DS(ON)
DS(ON)
DS(ON)
(TO-251AA)
o
2
C/W)
copper pad area
I-PAK
= 3.9m , V
= 4.4m , V
GS
GS
= 10V, I
= 4.5V, I
-55 to 175
Ratings
Figure 4
D
D
G
1.07
0.94
= 35A
160
150
690
160
100
= 35A
30
21
52
20
April 2008
D
S
FDD8870 / FDU8870 Rev. C2
Units
W/
o
o
o
C/W
C/W
C/W
tm
mJ
o
W
V
A
V
A
A
A
C
o
C

Related parts for FDD8870

FDD8870 Summary of contents

Page 1

... I-PAK (TO-251AA 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with C/ copper pad area April 2008 tm = 10V 35A 4.5V 35A Ratings Units 160 A 150 Figure 4 A 690 mJ 160 -55 to 175 C o 0.94 C/W o 100 C C/W FDD8870 / FDU8870 Rev. C2 ...

Page 2

... 27V 10V Tape Width Quantity 13” 12mm 2500 units N/A 75 units Min Typ Max 150 250 100 1.2 - 2.5 - 0.0032 0.0039 - 0.0036 0.0044 - 0.0051 0.0063 - 5160 - - 990 - - 590 - - 2 118 - 15V 6.5 = 35A - 1.0mA - 139 - 189 - - 1. 1 FDD8870 / FDU8870 Rev. C2 Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8870 / FDU8870 Rev. C2 175 ...

Page 4

... Resistance vs Junction Temperature o STARTING STARTING T = 150 (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS TIME IN AVALANCHE (ms) AV Capability 10V 2. PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.2 0 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD8870 / FDU8870 Rev. C2 100 = 0.6 = 35A D 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current FDD8870 / FDU8870 Rev. C2 200 100 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8870 / FDU8870 Rev 10V 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8870 / FDU8870 Rev. C2 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD8870 rev July 2003 4.2e 4.2e-9 Cin 6 8 4.7e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 32.7 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2e-9 RLgate RLdrain ...

Page 9

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD8870 / FDU8870 Rev. C2 DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD8870 / FDU8870 Rev. C2 ...

Page 11

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDD8870 / FDU8870 Rev. C2 ® Rev. I34 ...

Related keywords