FDD8870 Fairchild Semiconductor, FDD8870 Datasheet - Page 3

• Manufacturer Part Number: FDD8870
• Description: MOSFET N-CH 30V 160A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8870

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 5160pF @ 15V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
1000
2000
0.1
100
0
30
2
1
10
10
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
-5
V
GS
25
= 4.5V
T
50
C
SINGLE PULSE
Temperature
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
10
75
10
-4
-4
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
T
C
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
t, RECTANGULAR PULSE DURATION (s)
150
175
t, PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
175
150
125
100
75
50
25
0
25
50
Case Temperature
10
10
T
-1
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
DM
C
I = I
= 25
x Z
25
CURRENT LIMITED
BY PACKAGE
o
10
10
P
C
JC
DM
1
0
0
o
/t
125
C DERATE PEAK
x R
2
175 - T
o
C)
JC
150
FDD8870 / FDU8870 Rev. C2
t
1
+ T
t
C
2
150
C
10
10
175
1
1