FDD8870 Fairchild Semiconductor, FDD8870 Datasheet - Page 4

• Manufacturer Part Number: FDD8870
• Description: MOSFET N-CH 30V 160A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8870

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 5160pF @ 15V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©20048Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
100
1000
80
60
40
20
100
0.1
0
10
1.5
8
6
4
2
1
8
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
DD
SINGLE PULSE
T
T
I
OPERATION IN THIS
D
J
C
LIMITED BY r
= MAX RATED
= 15V
= 1A
= 25
Voltage and Drain Current
AREA MAY BE
I
o
D
C
V
V
= 35A
GS
V
DS
GS
, GATE TO SOURCE VOLTAGE (V)
T
, DRAIN TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
J
DS(ON)
= 25
2.0
o
C
T
J
= 175
6
o
C
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
2.5
= 25°C unless otherwise noted
8
T
J
= -55
10ms
10 s
100 s
1ms
DC
o
C
3.0
60
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
80
60
40
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
1
0.1
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R
t
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
AV
AV
STARTING T
= (L)(I
= (L/R)ln[(I
0
-40
V
GS
V
AS
DS
= 10V
T
)/(1.3*RATED BV
J
t
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (
AV
J
AS
GS
= 150
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
0.2
Capability
= 5V
1
o
C
40
V
STARTING T
DSS
GS
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
= 3V
- V
80
DD
DSS
0.4
)
10
V
GS
- V
J
120
= 25
DD
FDD8870 / FDU8870 Rev. C2
= 10V, I
V
o
GS
C)
) +1]
V
o
GS
C
= 2.5V
T
C
160
= 4V
D
= 25
= 35A
o
C
100
200
0.6