FDD8870 Fairchild Semiconductor, FDD8870 Datasheet - Page 6

• Manufacturer Part Number: FDD8870
• Description: MOSFET N-CH 30V 160A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8870

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 5160pF @ 15V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15. Unclamped Energy Test Circuit
g(REF)
Figure 19. Switching Time Test Circuit
P
Figure 17. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01
L
-
+
V
-
+
-
+
DD
V
V
DD
DD
0
I
0
0
V
V
V
g(REF)
0
0
V
DD
GS
DS
10%
GS
Figure 16. Unclamped Energy Waveforms
= 1V
Figure 20. Switching Time Waveforms
Figure 18. Gate Charge Waveforms
t
d(ON)
90%
Q
Q
gs
Q
50%
t
gs2
ON
g(TH)
10%
t
r
I
AS
PULSE WIDTH
Q
V
Q
t
DS
gd
P
g(5)
Q
g(TOT)
BV
t
AV
DSS
V
V
GS
GS
t
d(OFF)
90%
FDD8870 / FDU8870 Rev. C2
= 5V
V
t
DS
OFF
50%
t
V
f
10%
GS
V
= 10V
DD
90%