FQPF9N25CYDTU Fairchild Semiconductor, FQPF9N25CYDTU Datasheet

MOSFET N-CH 250V 8.8A TO-220F

FQPF9N25CYDTU

Manufacturer Part Number
FQPF9N25CYDTU
Description
MOSFET N-CH 250V 8.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF9N25CYDTU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8.8 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
FQP9N25C/FQPF9N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJS
θJA
, T
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 8.8A, 250V, R
• Low gate charge ( typical 26.5 nC)
• Low Crss ( typical 45.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF Series
FQP9N25C
FQP9N25C
35.2
0.59
1.69
62.5
DS(on)
8.8
5.6
0.5
74
-55 to +150
= 0.43Ω @V
± 30
250
285
300
8.8
7.4
5.5
FQPF9N25C
FQPF9N25C
G
35.2 *
8.8 *
5.6 *
3.29
62.5
0.3
38
--
QFET
GS
= 10 V
D
S
Units
Units
Rev. A, March 2004
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQPF9N25CYDTU Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Case-to-Sink Typ. θJS R Thermal Resistance, Junction-to-Ambient θJA ©2004 Fairchild Semiconductor Corporation Features • 8.8A, 250V, R • Low gate charge ( typical 26.5 nC) • Low Crss ( typical 45.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ...

Page 2

... G ≤ 8.8A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 1500 C iss 1000 C oss C rss 500 Notes : ※ MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for FQP9N25C Case Temperature [ ] C Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 0 250 µA D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP9N25C Figure 11-2. Transient Thermal Response Curve for FQPF9N25C ©2004 Fairchild Semiconductor Corporation (Continued) ※ θ ※ ℃ θ ℃ θ θ Rev. A, March 2004 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2004 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, March 2004 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2004 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2004 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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