FDPF680N10T

Manufacturer Part NumberFDPF680N10T
DescriptionMOSFET N-CH 100V 12A TO-220F
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDPF680N10T datasheet
 


Specifications of FDPF680N10T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs68 mOhm @ 6A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C12AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs17nC @ 10VInput Capacitance (ciss) @ Vds1000pF @ 50V
Power - Max24WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)68 m Ohms
Forward Transconductance Gfs (max / Min)26 SDrain-source Breakdown Voltage100 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current12 A
Power Dissipation24 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDPF680N10T
N-Channel PowerTrench
100V, 12A, 68mΩ
Features
• R
= 54mΩ ( Typ.)@ V
= 10V, I
DS(on)
GS
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Application
• DC to AC Converters / Synchronous Rectification
D
G
S
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
©2008 Fairchild Semiconductor Corporation
FDPF680N10T Rev. A
®
MOSFET
Description
= 6A
This N-Channel MOSFET is produced using Fairchild Semicon-
D
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
TO-220F
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
November 2008
D
G
S
Ratings
100
±20
12
7.6
(Note 1)
48
(Note 2)
50.4
(Note 3)
13.0
24
0.19
-55 to +150
300
Ratings
5.2
62.5
www.fairchildsemi.com
Units
V
V
A
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF680N10T Summary of contents

  • Page 1

    ... Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDPF680N10T Rev. A ® MOSFET Description = 6A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

  • Page 2

    ... Starting ≤ 12A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDPF680N10T Rev. A Package Reel Size TO-220F - unless otherwise noted C Test Conditions I = 250μA, V ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss = shorted) C oss = rss = iss 1000 C oss C rss 100 10 0.01 0 Drain-Source Voltage [V] DS FDPF680N10T Rev. A Figure 2. Transfer Characteristics 60 10 *Notes: 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 200 100 10 = 10V 20V ...

  • Page 4

    ... Junction Temperature [ J Figure 9. Maximum Safe Operating Area 100 10 10ms DC Operation in This Area 1 is Limited by R DS(on) 0.1 0. Drain-Source Voltage [ 0.1 0.01 10 FDPF680N10T Rev. A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 0.5 *Notes 250 μ 0.0 -100 100 150 200 o C] Figure 10 ...

  • Page 5

    ... FDPF680N10T Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDPF680N10T Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions 10.16 MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP [2.54 ±0.20 ] 9.40 FDPF680N10T Rev. A TO-220F ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ±0.20 ] ±0.20 7 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 8

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDPF680N10T Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...