FDPF680N10T Fairchild Semiconductor, FDPF680N10T Datasheet

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FDPF680N10T

Manufacturer Part Number
FDPF680N10T
Description
MOSFET N-CH 100V 12A TO-220F
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDPF680N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
68 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 50V
Power - Max
24W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
68 m Ohms
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
24 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF680N10T
Manufacturer:
FSC
Quantity:
5 799
©2008 Fairchild Semiconductor Corporation
FDPF680N10T Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDPF680N10T
N-Channel PowerTrench
100V, 12A, 68mΩ
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
• DC to AC Converters / Synchronous Rectification
J
L
DSS
GSS
AS
D
Application
θJC
θJA
, T
Symbol
Symbol
R
STG
DS(on)
DS(on)
= 54mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-220F
D
= 6A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted*
= 25
MOSFET
o
C)
C
C
= 25
= 100
1
o
C
o
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
S
D
-55 to +150
Ratings
Ratings
50.4
13.0
0.19
100
±20
300
62.5
7.6
12
48
24
5.2
November 2008
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
C/W
o
o
W
V
V
A
A
C
C
o
C

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FDPF680N10T Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDPF680N10T Rev. A ® MOSFET Description = 6A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 12A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDPF680N10T Rev. A Package Reel Size TO-220F - unless otherwise noted C Test Conditions I = 250μA, V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss = shorted) C oss = rss = iss 1000 C oss C rss 100 10 0.01 0 Drain-Source Voltage [V] DS FDPF680N10T Rev. A Figure 2. Transfer Characteristics 60 10 *Notes: 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 200 100 10 = 10V 20V ...

Page 4

... Junction Temperature [ J Figure 9. Maximum Safe Operating Area 100 10 10ms DC Operation in This Area 1 is Limited by R DS(on) 0.1 0. Drain-Source Voltage [ 0.1 0.01 10 FDPF680N10T Rev. A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 0.5 *Notes 250 μ 0.0 -100 100 150 200 o C] Figure 10 ...

Page 5

... FDPF680N10T Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDPF680N10T Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 10.16 MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP [2.54 ±0.20 ] 9.40 FDPF680N10T Rev. A TO-220F ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ±0.20 ] ±0.20 7 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDPF680N10T Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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