This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss = shorted) C oss = rss = iss 1000 C oss C rss 100 10 0.01 0 Drain-Source Voltage [V] DS FDPF680N10T Rev. A Figure 2. Transfer Characteristics 60 10 *Notes: 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 200 100 10 = 10V 20V ...
... Junction Temperature [ J Figure 9. Maximum Safe Operating Area 100 10 10ms DC Operation in This Area 1 is Limited by R DS(on) 0.1 0. Drain-Source Voltage [ 0.1 0.01 10 FDPF680N10T Rev. A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 0.5 *Notes 250 μ 0.0 -100 100 150 200 o C] Figure 10 ...
... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDPF680N10T Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...