FDPF680N10T Fairchild Semiconductor, FDPF680N10T Datasheet - Page 4

• Manufacturer Part Number: FDPF680N10T
• Description: MOSFET N-CH 100V 12A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDPF680N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 68 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 50V
• Power - Max: 24W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 68 m Ohms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 24 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDPF680N10T Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
V
J
, Junction Temperature [
DS
, Drain-Source Voltage [V]
0
DS(on)
DC
10
0.01
10ms
0.1
10
50
1
10
*Notes:
0.05
0.5
0.2
0.1
0.02
Single pulse
0.01
-5
1. T
2. T
3. Single Pulse
1ms
C
J
100
= 150
= 25
Figure 11. Transient Thermal Response Curve
100
*Notes:
10
o
1. V
2. I
o
C
μ
o
C
s
C]
-4
D
150
GS
= 250
20
100
= 0V
μ
s
μ
A
10
200
200
-3
Rectangular Pulse Duration [sec]
(Continued)
10
-2
4
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
-100
8
6
4
2
0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
10
-1
-50
50
T
J
T
, Junction Temperature
*Notes:
C
1. Z
2. Duty Factor, D= t
3. T
, Case Temperature
P
vs. Temperature
DM
1
vs. Case Temperature
0
θ
JM
JC
75
(t) = 5.2
- T
C
= P
t
50
1
t
2
o
DM
10
C/W Max.
100
* Z
1
100
θ
/t
JC
2
(t)
[
*Notes:
o
[
C
1. V
2. I
o
]
10
125
C
D
150
]
GS
2
= 6A
= 10V
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200
150