FDD8444 Fairchild Semiconductor, FDD8444 Datasheet

MOSFET N-CH 40V 145A DPAK

FDD8444

Manufacturer Part Number
FDD8444
Description
MOSFET N-CH 40V 145A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8444

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
6195pF @ 25V
Power - Max
153W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0094 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
145 A
Power Dissipation
153000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17.5A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
5.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8444TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8444
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD8444
Manufacturer:
FAIRCHILD
Quantity:
3 750
Part Number:
FDD8444
Manufacturer:
FSC进口
Quantity:
20 000
Company:
Part Number:
FDD8444
Quantity:
47 500
Part Number:
FDD8444L
Manufacturer:
FSC
Quantity:
2 809
Part Number:
FDD8444L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
FDD8444 Rev B (W)
FDD8444
N-Channel PowerTrench
40V, 50A, 5.2mΩ
Features
Typ r
Typ Q
Low Miller Charge
Low Q
UIS Capability (Single Pulse/ Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
DS(on)
g(10)
rr
Body Diode
= 89nC at V
= 4mΩ at V
GS
GS
= 10V, I
= 10V
D
= 50A
®
MOSFET
1
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
www.fairchildsemi.com
June 2007
tm

Related parts for FDD8444

FDD8444 Summary of contents

Page 1

... GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant ©2006 Fairchild Semiconductor Corporation FDD8444 Rev B (W) ® MOSFET Applications Automotive Engine Control = 50A D Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs ...

Page 2

... Total Gate Charge at 5V g(5) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller“ Charge gd FDD8444 Rev B ( 25°C unless otherwise noted C Parameter = 10V) (Note C/W) θJA (Note 2) 2 copper pad area ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDD8444 Rev B ( ...

Page 4

... SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 2000 V = 10V TRANSCONDUCTANCE GS MAY LIMIT CURRENT 1000 IN THIS REGION 100 SINGLE PULSE FDD8444 Rev B (W) 160 140 120 100 125 150 175 ( Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION(s) -3 ...

Page 5

... DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8444 Rev B (W) 500 10us ≠ 100 100us 10 1ms 10ms DC 1 0.01 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching ...

Page 6

... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 1000 C rss f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDD8444 Rev B (W) 1. 250 μ 1.10 1.05 1.00 0.95 0.90 80 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ e-Series™ Build it Now™ GTO™ CorePLUS™ i-Lo™ ...

Related keywords