IRFR310TRRPBF Vishay, IRFR310TRRPBF Datasheet

MOSFET N-CH 400V 1.7A DPAK

IRFR310TRRPBF

Manufacturer Part Number
IRFR310TRRPBF
Description
MOSFET N-CH 400V 1.7A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR310TRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
3.6ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
3.6 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91272
S10-1135-Rev. C, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(TO-252)
D
DD
(Max.) (nC)
DPAK
(nC)
(V)
(nC)
≤ 1.7 A, dI/dt ≤ 40 A/μs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 52 mH, R
G
c
a
a
D S
DD
b
V
≤ V
GS
e
DPAK (TO-252)
SiHFR310-GE3
IRFR310PbF
SiHFR310-E3
IRFR310
SiHFR310
DS
= 10 V
G
, T
N-Channel MOSFET
J
e
≤ 150 °C.
Single
400
1.9
6.5
12
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
IRFR310, IRFU310, SiHFR310, SiHFU310
DPAK (TO-252)
SiHFR310TRL-GE3
IRFR310TRLPbF
SiHFR310TL-E3
IRFR310TRL
SiHFR310TL
GS
3.6
AS
at 10 V
= 1.7 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
a
a
T
T
C
C
a
= 100 °C
a
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR310, SiHFR310)
• Straight Lead (IRFU310, SiHFU310)
• Available in Tape and Reel
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
DPAK (TO-252)
SiHFR310TR-GE3
IRFR310TRPbF
SiHFR310T-E3
IRFR310TR
SiHFR310T
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
a
a
D
D
stg
a
a
design,
DPAK (TO-252)
SiHFR310TRR-GE3
IRFR310TRRPbF
SiHFR310TR-E3
-
-
- 55 to + 150
LIMIT
0.020
260
± 20
0.20
400
1.7
1.1
6.0
1.7
2.5
2.5
4.0
86
25
low
Vishay Siliconix
d
a
a
on-resistance
IPAK (TO-251)
SiHFU310-GE3
IRFU310PbF
SiHFU310-E3
IRFU310
SiHFU310
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

Related parts for IRFR310TRRPBF

IRFR310TRRPBF Summary of contents

Page 1

... T = 100 ° ° °C A for Ω 1.7 A (see fig. 12 ≤ 150 °C. J Vishay Siliconix device design, low on-resistance DPAK (TO-252) IPAK (TO-251) SiHFR310TRR-GE3 SiHFU310-GE3 a a IRFR310TRRPbF IRFU310PbF a a SiHFR310TR-E3 SiHFU310- IRFU310 a - SiHFU310 SYMBOL LIMIT V 400 DS V ± 1 1.1 I 6.0 DM 0.20 0.020 ...

Page 2

... IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, steady-state) Maximum Junction-to-Ambient Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91272 S10-1135-Rev. C, 10-May-10 IRFR310, IRFU310, SiHFR310, SiHFU310 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91272 S10-1135-Rev. C, 10-May-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91272 S10-1135-Rev. C, 10-May-10 IRFR310, IRFU310, SiHFR310, SiHFU310 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91272. Document Number: 91272 S10-1135-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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