FQPF8N60CFT Fairchild Semiconductor, FQPF8N60CFT Datasheet

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FQPF8N60CFT

Manufacturer Part Number
FQPF8N60CFT
Description
MOSFET N-CH 600V 6.26A TO-220F
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet
1.FQPF8N60CFT.pdf (8 pages)

Specifications of FQPF8N60CFT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 3.13A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.26A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1255pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FQPF8N60CFT
Manufacturer:
HITACHI
Quantity:
9 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FQPF8N60CFT
Manufacturer:
FAIRCHILD
Quantity:
196
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev. A
FQPF8N60CF
600V N-Channel MOSFET
Features
• 6.26A, 600V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 1.5Ω @V
G
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
TO-220F
FQPF Series
Parameter
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FQPF8N60CFT
FQPF8N60CF
-55 to +150
S
6.26*
3.96*
D
± 30
6.26
14.7
0.38
600
160
300
25*
4.5
48
62.5
2.6
FRFET
February 2006
www.fairchildsemi.com
Units
W/°C
Units
V/ns
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF8N60CFT Summary of contents

Page 1

... Parameter - Continuous (T = 25° Continuous (T = 100° Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° Derate above 25°C Parameter 1 February 2006 FRFET FQPF8N60CFT Units 600 6.26* 3.96* 25* ± 30 160 mJ 6.26 14.7 mJ 4.5 V/ 0.38 W/°C -55 to +150 °C 300 °C FQPF8N60CF Units 2.6 ° ...

Page 2

... Package Marking and Ordering Information Device Marking Device FQPF8N60CFT FQPF8N60CFT Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV / DSS Breakdown Voltage Temperature Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FQPF8N60CF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FQPF8N60CF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FQPF8N60CF Rev. A TO-220F ±0.20 ±0.10 10.16 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 7 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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