IRF740B Fairchild Semiconductor, IRF740B Datasheet

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IRF740B

Manufacturer Part Number
IRF740B
Description
MOSFET N-CH 400V 10A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRF740B

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
540 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
134W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
IRF740B/IRFS740B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
IRF Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 10A, 400V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFS Series
TO-220F
IRF740B
IRF740B
DS(on)
1.08
0.93
62.5
134
6.3
0.5
10
40
-55 to +150
= 0.54
13.4
400
450
300
5.5
10
30
G
IRFS740B
IRFS740B
@V
6.3 *
0.35
10 *
40 *
2.86
62.5
44
GS
--
= 10 V
November 2001
D
S
Rev. A, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A

Related parts for IRF740B

IRF740B Summary of contents

Page 1

... C Parameter November 2001 = 0. DS(on IRF740B IRFS740B Units 400 6.3 6 450 13.4 mJ 5.5 V/ns 134 44 W 1.08 0.35 W/°C -55 to +150 °C 300 °C IRF740B IRFS740B Units 0.93 2.86 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, November 2001 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 7.9mH 10A 50V ≤ 10A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 400 ...

Page 3

... D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C oss 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ 10V 20V 0 10 ※ Note : T = 25℃ ...

Page 4

... DS(on ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF740B Case Temperature [ ℃ Figure 10. Maximum Drain Current vs Case Temperature ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ A 0.5 2 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for IRF740B Figure 11-2. Transient Thermal Response Curve for IRFS740B ©2001 Fairchild Semiconductor Corporation (Continued) ※ θ tio ※ tio ( ℃ (t) θ ( ℃ θ (t) θ Rev. A, November 2001 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions ©2001 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters Rev. A, November 2001 ...

Page 9

... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, November 2001 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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