IRF740B Fairchild Semiconductor, IRF740B Datasheet
IRF740B
Specifications of IRF740B
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IRF740B Summary of contents
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... C Parameter November 2001 = 0. DS(on IRF740B IRFS740B Units 400 6.3 6 450 13.4 mJ 5.5 V/ns 134 44 W 1.08 0.35 W/°C -55 to +150 °C 300 °C IRF740B IRFS740B Units 0.93 2.86 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, November 2001 ...
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... Repetitive Rating : Pulse width limited by maximum junction temperature 7.9mH 10A 50V ≤ 10A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 400 ...
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... D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C oss 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ 10V 20V 0 10 ※ Note : T = 25℃ ...
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... DS(on ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF740B Case Temperature [ ℃ Figure 10. Maximum Drain Current vs Case Temperature ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ A 0.5 2 ...
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... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for IRF740B Figure 11-2. Transient Thermal Response Curve for IRFS740B ©2001 Fairchild Semiconductor Corporation (Continued) ※ θ tio ※ tio ( ℃ (t) θ ( ℃ θ (t) θ Rev. A, November 2001 ...
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... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...
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... Package Dimensions ©2001 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters Rev. A, November 2001 ...
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... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, November 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...