FQPF65N06 Fairchild Semiconductor, FQPF65N06 Datasheet

MOSFET N-CH 60V 40A TO-220F

FQPF65N06

Manufacturer Part Number
FQPF65N06
Description
MOSFET N-CH 60V 40A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF65N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
2410pF @ 25V
Power - Max
56W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Forward Transconductance Gfs (max / Min)
40 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
40 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
40A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Fall Time
105 ns
Rise Time
160 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF65N06
Manufacturer:
FAIRCHILD
Quantity:
4 250
Part Number:
FQPF65N06
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF65N06
Manufacturer:
FSC
Quantity:
86 755
Part Number:
FQPF65N06
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
FQPF65N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
Parameter
= 25°C)
T
C
FQPF Series
C
C
TO-220F
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 40A, 60V, R
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G
!
!
DS(on)
Typ
--
--
! "
! "
FQPF65N06
= 0.016
-55 to +175
!
!
!
!
S
D
"
"
"
"
"
"
28.3
0.37
160
645
300
5.6
7.0
60
40
40
56
25
@ V
Max
2.66
62.5
QFET
GS
= 10 V
May 2001
Units
W/°C
Units
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQPF65N06

FQPF65N06 Summary of contents

Page 1

... C Parameter May 2001 QFET = 0.016 @ DS(on " " ! " ! " " " " " FQPF65N06 Units 60 40 28.3 160 25 645 mJ 40 5.6 mJ 7.0 V/ns 56 0.37 W/°C -55 to +175 300 Typ Max Units -- 2.66 °C/W -- 62.5 °C/W Rev. A1. May 2001 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 470 40A 25V ≤ 65A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5000 4000 C oss 3000 C iss 2000 C rss 1000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 175 ℃ 25 ℃ Figure 2. Transfer Characteristics 175 ℃ ※ Note : T = 25℃ J 200 250 300 ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 50 40 100 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Rev. A1. May 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

Related keywords