IRFL110PBF Vishay, IRFL110PBF Datasheet

IRFL110PBF

Manufacturer Part Number

IRFL110PBF

Description

MOSFET N-CH 100V 1.5A SOT223

Manufacturer

Vishay

Type

Power MOSFETr

Datasheets

1.IRFL110TRPBF.pdf (9 pages)

2.IRFL110PBF.pdf (8 pages)

3.IRFL110PBF.pdf (9 pages)

Specifications of IRFL110PBF

Transistor Polarity

N-Channel

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

540 mOhm @ 900mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

1.5A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

8.3nC @ 10V

Input Capacitance (ciss) @ Vds

180pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Minimum Operating Temperature

- 55 C

Configuration

Single Dual Drain

Resistance Drain-source Rds (on)

0.54 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.5 A

Power Dissipation

2000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Continuous Drain Current Id

1.5A

Drain Source Voltage Vds

100V

On Resistance Rds(on)

540mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.54Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFL110PBF

Manufacturer:

Quantity:

5 920

Current page: 1 of 9
Download datasheet (198Kb)

Description

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The SOT-223 package is designed for surface-mount using

vapor phase, infra red, or wave soldering techniques. Its

unique package design allows for easy automatic pick-and-

place as with other SOT or SOIC packages but has the

added advantage of improved thermal performance due to

an enlarged tab for heatsinking. Power dissipation of

grreater than 1.25W is possible in a typical surface mount

application.

Document Number: 91192

** When mounted on 1'' square pcb (FR-4 or G-10 Material).

Thermal Resistance

HEXFET

dv/dt

Absolute Maximum Ratings

θJC

θJA

For recommended footprint and soldering techniques refer to application note #AN-994.

@ Tc = 25°C

@ Tc = 100°C

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Lead-Free

@Tc = 25°C

STG

= 25°C

Power MOSFET

Soldewring Temperature, for 10 seconds

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Power Dissipation (PCB Mount)**

Linear Derating Factor

Linear Derating Factor (PCB Mount)**

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-PCB

Junction-to-Ambient. (PCB Mount)**

Parameter

@ 10 V

Typ.

–––

300 (1.6mm from case)

IRFL110PbF

-55 to + 150

SOT-223

Max.

0.025

0.017

-/+20

0.96

0.31

5.5

150

1.5

3.1

2.0

1.5

Max.

DS(on)

DSS

= 1.5A

www.vishay.com

= 100V

= 0.54Ω

PD - 95317

05/26/04

Units

°C/W

Units

W/°C

V/ns

°C

Related parts for IRFL110PBF

IRFL110PBF Summary of contents

Page 1

... Soldewring Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-PCB θJC R Junction-to-Ambient. (PCB Mount)** θJA ** When mounted on 1'' square pcb (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Document Number: 91192 IRFL110PbF - 150 300 (1.6mm from case) Typ. ––– ...

Page 2

... IRFL110PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Document Number: 91192 IRFL110PbF www.vishay.com 3 ...

Page 4

... IRFL110PbF Document Number: 91192 www.vishay.com 4 ...

Page 5

... Document Number: 91192 IRFL110PbF www.vishay.com 5 ...

Page 6

... IRFL110PbF Document Number: 91192 www.vishay.com 6 ...

Page 7

... Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INTERNATIONAL FL014 RECTIFIER LOGO TOP Document Number: 91192 PART NUMBER 314P A = ASSEMBLY SITE DATE CODE CODE (YYWW YEAR WW = WEEK P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) IRFL110PbF LOT CODE AXXXX BOTTOM www.vishay.com 7 ...

Page 8

... IRFL110PbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2.05 (.080) 1.95 (.077) TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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