FQPF9N50CF Fairchild Semiconductor, FQPF9N50CF Datasheet

MOSFET N-CH 500V 9A TO-220F

FQPF9N50CF

Manufacturer Part Number
FQPF9N50CF
Description
MOSFET N-CH 500V 9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FQPF9N50CF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1030pF @ 25V
Power - Max
44W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohms
Forward Transconductance Gfs (max / Min)
6.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
44 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
64 ns
Rise Time
65 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF9N50CF
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF9N50CF
Manufacturer:
Fairchi/ON
Quantity:
17 427
Part Number:
FQPF9N50CF
Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
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©2005 Fairchild Semiconductor Corporation
FQPF9N50CF Rev. A
FQPF9N50CF
500V N-Channel MOSFET
Features
• 9A, 500V, R
• Low gate charge (typical 28 nC)
• Low Crss (typical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.85Ω @V
G
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
TO-220F
FQPF Series
Parameter
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FQPF9N50CF
FQPF9N50CF
-55 to +150
S
D
± 30
0.35
5.4*
500
360
300
36*
4.4
4.5
44
9*
9
2.86
62.5
FRFET
December 2005
www.fairchildsemi.com
Units
W/°C
Units
V/ns
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF9N50CF Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FQPF9N50CF Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature * Current limited by maximum junction temperature FQPF9N50CF Rev. A Package Reel Size TO-220F -- T = 25°C unless otherwise noted C Test Conditions = 250 µA ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 1600 C iss 1200 C oss 800 C rss 400 Drain-Source Voltage [V] DS FQPF9N50CF Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage V = 10V 20V GS ※ Note : ℃ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQPF9N50CF Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 o C] Figure 10. Maximum Drain Current 10 10 µ s 100 µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQPF9N50CF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQPF9N50CF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FQPF9N50CF Rev. A TO-220F ±0.20 10.16 ø3.18 ±0.10 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 7 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQPF9N50CF Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...

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