MOSFET N-CH 250V 790MA SOT223

IRFL214PBF

Manufacturer Part NumberIRFL214PBF
DescriptionMOSFET N-CH 250V 790MA SOT223
ManufacturerVishay
IRFL214PBF datasheet
 

Specifications of IRFL214PBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs2 Ohm @ 470mA, 10V
Drain To Source Voltage (vdss)250VCurrent - Continuous Drain (id) @ 25° C790mA
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs8.2nC @ 10V
Input Capacitance (ciss) @ Vds140pF @ 25VPower - Max2W
Mounting TypeSurface MountPackage / CaseSOT-223 (3 leads + Tab), SC-73, TO-261
Minimum Operating Temperature- 55 CConfigurationDual Dual Drain
Resistance Drain-source Rds (on)2 Ohm @ 10 VDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current0.79 A
Power Dissipation2000 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTContinuous Drain Current Id790mA
Drain Source Voltage Vds250VOn Resistance Rds(on)2ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
SOT-223
D
S
G
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91194
S10-1257-Rev. C, 31-May-10
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
250
Definition
2.0
• Surface Mount
8.2
• Available in Tape and Reel
1.8
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
4.5
• Fast Switching
Single
• Ease of Paralleling
• Simple Drive Requirements
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
S
Its unique package design allows for easy automatic
N-Channel MOSFET
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
SiHFL214-GE3
IRFL214PbF
SiHFL214-E3
IRFL214
SiHFL214
= 25 °C, unless otherwise noted)
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
IRFL214, SiHFL214
Vishay Siliconix
device
design,
low
on-resistance
SOT-223
a
SiHFL214TR-GE3
a
IRFL214TRPbF
a
SiHFL214T-E3
a
IRFL214TR
a
SiHFL214T
SYMBOL
LIMIT
V
250
DS
V
± 20
GS
0.79
I
D
0.50
I
6.3
DM
0.025
0.017
E
50
AS
I
0.79
AR
E
0.31
AR
3.1
P
D
2.0
www.vishay.com
and
UNIT
V
A
W/°C
mJ
A
mJ
W
1

IRFL214PBF Summary of contents

  • Page 1

    ... SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1. possible in a typical surface mount application. SOT-223 SiHFL214-GE3 IRFL214PbF SiHFL214-E3 IRFL214 SiHFL214 = 25 °C, unless otherwise noted °C ...

  • Page 2

    ... IRFL214, SiHFL214 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 128 mH ≤ 2.7 A, dI/dt ≤ 65 A/μs, V ≤ ...

  • Page 3

    ... I S showing the integral reverse junction diode ° 0. ° 2.7 A, dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated Fig Normalized On-Resistance vs. Temperature IRFL214, SiHFL214 Vishay Siliconix MIN. TYP. MAX 190 390 b - 0.64 1.3 and L S Fig Typical Transfer Characteristics www ...

  • Page 4

    ... IRFL214, SiHFL214 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91194 S10-1257-Rev. C, 31-May-10 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91194 S10-1257-Rev. C, 31-May-10 IRFL214, SiHFL214 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

  • Page 6

    ... IRFL214, SiHFL214 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

  • Page 7

    ... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91194. ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...