IRFRC20TRRPBF Vishay, IRFRC20TRRPBF Datasheet

MOSFET N-CH 600V 2A DPAK

IRFRC20TRRPBF

Manufacturer Part Number
IRFRC20TRRPBF
Description
MOSFET N-CH 600V 2A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFRC20TRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 Ohm @ 1.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
4.4ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
4.4 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Rise Time
23 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91285
S10-1139-Rev. D, 17-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
(TO-252)
DS(on)
g
gs
gd
D
SD
DD
DPAK
(Max.) (nC)
(nC)
(V)
(nC)
≤ 2.0 A, dI/dt ≤ 40 A/μs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 37 mH, R
DPAK (TO-252)
SiHFRC20-GE3
IRFRC20PbF
SiHFRC20-E3
IRFRC20
SiHFRC20
G
c
D S
a
a
DD
b
V
≤ V
GS
e
= 10 V
DS
, T
G
J
e
N-Channel MOSFET
Single
≤ 150 °C.
600
3.0
8.9
18
SiHFRC20TRL-GE3
DPAK (TO-252)
IRFRC20TRLPbF
SiHFRC20TL-E3
IRFRC20TRL
SiHFRC20TL
g
= 25 Ω, I
C
= 25 °C, unless otherwise noted
IRFRC20, IRFUC20, SiHFRC20, SiHFUC20
D
S
Power MOSFET
V
4.4
GS
AS
at 10 V
a
a
= 2.0 A (see fig. 12).
T
T
a
C
A
for 10 s
a
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
SiHFRC20TR-GE3
IRFRC20TRPbF
SiHFRC20T-E3
IRFRC20TR
SiHFRC20T
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFRC20, SiHFRC20)
• Straight Lead (IRFUC20, SiHFUC20)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFUC, SiHFUC series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
a
a
SYMBOL
T
a
a
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
DPAK (TO-252)
SiHFRC20TRR-GE3
IRFRC20TRRPbF
SiHFRC20TR-E3
IRFRC20TRR
SiHFRC20TR
design,
- 55 to + 150
LIMIT
0.020
260
± 20
0.33
a
a
600
2.0
1.3
8.0
2.0
4.2
2.5
3.0
74
42
low
Vishay Siliconix
a
d
a
on-resistance
IPAK (TO-251)
SiHFUC20-GE3
IRFUC20PbF
SiHFUC20-E3
IRFUC20
SiHFUC20
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFRC20TRRPBF Summary of contents

Page 1

... ° °C A for Ω 2.0 A (see fig. 12 ≤ 150 °C. J Vishay Siliconix device design, low on-resistance IPAK (TO-251) DPAK (TO-252) SiHFRC20TRR-GE3 SiHFUC20-GE3 a a IRFUC20PbF IRFRC20TRRPbF a a SiHFUC20-E3 SiHFRC20TR- IRFUC20 IRFRC20TRR a a SiHFUC20 SiHFRC20TR SYMBOL LIMIT V 600 DS V ± 2 1.3 I 8.0 DM ...

Page 2

... IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91285 S10-1139-Rev. D, 17-May-10 IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91285 S10-1139-Rev. D, 17-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91285 S10-1139-Rev. D, 17-May-10 IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 R g Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. ...

Page 6

... IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91285. Document Number: 91285 S10-1139-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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