IRFD224 Vishay

MOSFET N-CH 250V 630MA 4-DIP

IRFD224

Manufacturer Part Number

IRFD224

Description

MOSFET N-CH 250V 630MA 4-DIP

Manufacturer

Vishay

Specifications of IRFD224

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.1 Ohm @ 380mA, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

630mA

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

14nC @ 10V

Input Capacitance (ciss) @ Vds

260pF @ 25V

Power - Max

1W

Mounting Type

Through Hole

Package / Case

4-DIP (0.300", 7.62mm)

Transistor Polarity

N Channel

Peak Reflow Compatible (260 C)

No

Drain Source On Resistance @ 10v

1.1ohm

Thermal Resistance

120Â°C/W

Current Rating

760mA

Gate-to-drain Charge

5.2nC

Leaded Process Compatible

No

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFD224

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFD224

Quantity:

300

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