FQPF12N60C Fairchild Semiconductor, FQPF12N60C Datasheet

FQPF12N60C

Manufacturer Part Number

FQPF12N60C

Description

MOSFET N-CH 600V 12A TO-220F

Manufacturer

Fairchild Semiconductor

Series

QFET™r

Datasheet

1.FQPF12N60CT.pdf (10 pages)

Specifications of FQPF12N60C

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

650 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

12A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 10V

Input Capacitance (ciss) @ Vds

2290pF @ 25V

Power - Max

51W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.65 Ohms

Forward Transconductance Gfs (max / Min)

13 S

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

12 A

Power Dissipation

51 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: LEE, JEONGSOO

E-mail: JEONGSOO.LEE@fairchildsemi.com

Phone: 82-32-680-1311

Implementation of change:

Expected 1st Device Shipment Date: 2008/08/10

Earliest Year/Work Week of Changed Product: WW33

Change Type Description: Passivation Material, Fab Process Change

Description of Change (From): There is no passivation layer.

Description of Change (To): Adding Passivation layer on front metal.

Reason for Change : To improve product quality.

Qual/REL Plan Numbers : Q20070212

Qualification :

All items were passed.

Results/Discussion

Test: (Autoclave)

Lot

Q20070212AAACLV

Q20070212ABACLV

Q20070212ACACLV

Test: (High Temperature Gate Bias)

Lot

Q20070212AAHTGB

Q20070212ABHTGB

Q20070212ACHTGB

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: LEE, JEONGSOO

E-mail: JEONGSOO.LEE@fairchildsemi.com

Phone: 82-32-680-1311

Device

FQPF6N90C

Device

FQPF6N90C

500-HOURS

0/77

96-HOURS

0/77

1000-HOURS

0/77

Date Issued On : 2008/05/14

Date Created : 2008/05/09

Failure Code

PCN# : Q2081907

Pg. 1

Related parts for FQPF12N60C

FQPF12N60C Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

... FQP5N50C FQP6N50C FQPF12N60C FQPF13N50CSDTU FQPF13N50C_TC003 FQPF3N50C FQPF9N50C FQU2N60CTU FQU5N50CTU Failure Code 1000-HOURS Failure Code 0/77 0/77 0/77 Failure Code FQB13N50CTM FQB9N50CTM FQD2N60CTF_F105 FQD3N50CTF FQD3N50CTM_WS FQD5N50CTF FQD5N50CTM_F101 FQD6N50CTM FQD6N50CTM_WS FQI9N50CTU FQP13N50C FQP2N60C FQP3N50C_F080 FQP5N50C_F080 FQP9N50C FQPF12N60CT FQPF13N50CT FQPF2N60C FQPF5N50C FQPF9N50CT FQU3N50CTU FQU5N50CTU_WS Pg. 2 ...

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