IRFR9024TRPBF Vishay, IRFR9024TRPBF Datasheet - Page 7

MOSFET P-CH 60V 8.8A DPAK

IRFR9024TRPBF

Manufacturer Part Number
IRFR9024TRPBF
Description
MOSFET P-CH 60V 8.8A DPAK
Manufacturer
Vishay
Datasheets

Specifications of IRFR9024TRPBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.8 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-8.8A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFR9024PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9024TRPBF
Manufacturer:
LT
Quantity:
268
Part Number:
IRFR9024TRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91278
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
Diode Recovery
SD
Current
dv/dt
Forward Drop
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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