FCI7N60 Fairchild Semiconductor, FCI7N60 Datasheet

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FCI7N60

Manufacturer Part Number
FCI7N60
Description
MOSFET N-CH 600V 7A I2PAK
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCI7N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCI7N60
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FCI7N60
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FCI7N60 Rev. A3
FCI7N60
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Ultra Low Gate Charge (typ. Q
• Low Effective Output Capacitance (typ. C
• 100% Avalanche Tested
Absolute Maximum Ratings
Thermal Characteristics
• RoHS Compliant
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
DS(on)
J
= 150°C
= 0.53Ω
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
g
G
= 25nC)
D
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
S
Parameter
C
= 25°C)
oss
eff. = 60pF)
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
TM
is, Fairchild’s proprietary, new generation of high
FCI7N60
-55 to +150
FCI7N60
± 30
0.67
600
230
300
4.4
8.3
4.5
21
83
62.5
7
7
1.5
SuperFET
G
December 2008
S
D
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCI7N60 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FCI7N60 Rev. A3 Description SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. eff. = 60pF) This advanced technology has been tailored to minimize con- ...

Page 2

... Starting ≤ 7A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCI7N60 Rev. A3 Package Reel Size 2 I -PAK -- T = 25°C unless otherwise noted C Conditions 250µA, T ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 3000 2000 C oss C 1000 iss C rss Drain-Source Voltage [V] DS FCI7N60 Rev. A3 Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test ° Figure 4. Body Diode Forward Voltage 10V 20V GS * Note : T ...

Page 4

... 150 ° Single Pulse - Drain-Source Voltage [V] DS Figure 10. Transient Thermal Response Curve FCI7N60 Rev. A3 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 A µ 0.5 D 0.0 100 150 200 -100 C] ° Figure 10. Maximum Drain Current 10.0 100 us 7 ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FCI7N60 Rev. A3 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCI7N60 Rev. A3 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FCI7N60 Rev -PAK 2 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCI7N60 Rev. A3 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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