IRF530STRRPBF Vishay, IRF530STRRPBF Datasheet
IRF530STRRPBF
Specifications of IRF530STRRPBF
Available stocks
Related parts for IRF530STRRPBF
IRF530STRRPBF Summary of contents
Page 1
... ° 100 ° ° °C A for (see fig. 12 175 ° IRF530S, SiHF530S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263) a SiHF530STRR-GE3 a a IRF530STRRPbF a a SiHF530STR- IRF530STRR a a SiHF530STR SYMBOL LIMIT V 100 DS V ± 0.59 0.025 8 ...
Page 2
... IRF530S, SiHF530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Document Number: 91020 S10-1442-Rev. B, 05-Jul-10 4 µs Pulse Width ° 91020_03 = 25 ° µs Pulse Width T = 175 ° 91020_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF530S, SiHF530S Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3.5 ...
Page 4
... IRF530S, SiHF530S Vishay Siliconix 1400 MHz iss gs 1200 rss oss ds 1000 800 600 400 200 Drain-to-Source Voltage ( 91020_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91020_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss 10 C rss 1 91020_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91020 S10-1442-Rev. B, 05-Jul-10 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF530S, SiHF530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
Page 6
... IRF530S, SiHF530S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91020_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 200 Top ...
Page 7
... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91020. Document Number: 91020 S10-1442-Rev ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...