IRL620SPBF Vishay, IRL620SPBF Datasheet

MOSFET N-CH 200V 5.2A D2PAK

IRL620SPBF

Manufacturer Part Number
IRL620SPBF
Description
MOSFET N-CH 200V 5.2A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRL620SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 5V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.2 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
5.2 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRL620SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL620SPBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 843
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91302
S10-2476-Rev. B, 01-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free IRL620STRLPbF
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 5.2 A, dI/dt  95 A/μs, V
G D
= 50 V, starting T
()
D
S
2
PAK (TO-263)
a
J
= 25 °C, L = 6.9 mH, R
c
a
a
DD
b
V
GS
 V
e
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
 150 °C.
Single
200
2.9
9.6
16
g
D
SiHL620S-GE3
IRL620SPbF
SiHL620S-E3
IRL620S
SiHL620S
= 25 , I
D
S
2
C
PAK (TO-263)
= 25 °C, unless otherwise noted)
Power MOSFET
0.80
V
GS
AS
at 5 V
= 5.2 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic Level Gate Drive
• R
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on- resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Definition
DS(on)
2
PAK (TO-263) is a surface mount power package
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
2
PAK (TO-263) is suitable for high current
D
SiHL620STRL-GE3
IRL620STRLPbF
SiHL620STL-E3
-
-
2
PAK (TO-263)
GS
design,
IRL620S, SiHL620S
= 4 V and 5 V
- 55 to + 150
LIMIT
0.025
300
± 10
0.40
200
125
5.2
3.3
5.2
5.0
3.1
5.0
21
50
low
a
a
Vishay Siliconix
d
a
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRL620SPBF Summary of contents

Page 1

... S package. The D applications because of its low internal connection N-Channel MOSFET resistance and can dissipate typical surface mount application PAK (TO-263) SiHL620S-GE3 IRL620SPbF SiHL620S-E3 IRL620S SiHL620S = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRL620S, SiHL620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to Ambient (PCB Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91302 S10-2476-Rev. B, 01-Nov- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRL620S, SiHL620S Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRL620S, SiHL620S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91302 S10-2476-Rev. B, 01-Nov-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91302 S10-2476-Rev. B, 01-Nov-10 IRL620S, SiHL620S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRL620S, SiHL620S Vishay Siliconix Vary t to obtain p required D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 0.2 µF ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91302. Document Number: 91302 S10-2476-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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