IRFD9113 Vishay, IRFD9113 Datasheet

MOSFET P-CH 60V 600MA 4-DIP

IRFD9113

Manufacturer Part Number

IRFD9113

Description

MOSFET P-CH 60V 600MA 4-DIP

Manufacturer

Vishay

Datasheet

1.IRFD9113.pdf (6 pages)

Specifications of IRFD9113

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.6 Ohm @ 300mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

600mA

Gate Charge (qg) @ Vgs

15nC @ 15V

Input Capacitance (ciss) @ Vds

250pF @ 25V

Power - Max

1W

Mounting Type

Through Hole

Package / Case

4-DIP (0.300", 7.62mm)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

1.2 Ohms

Gate Charge Qg

11 nC

Drain-source Breakdown Voltage

- 60 V

Continuous Drain Current

- 0.6 A

Power Dissipation

1 W

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Vgs(th) (max) @ Id

-

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFD9113

Manufacturer:

IR

Quantity:

2 458

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFD9113

Quantity:

5 510

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFD9113

Manufacturer:

I/R

Quantity:

8 312

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