MOSFET P-CH 200V 3.6A DPAK

IRFR9220TRLPBF

Manufacturer Part NumberIRFR9220TRLPBF
DescriptionMOSFET P-CH 200V 3.6A DPAK
ManufacturerVishay
IRFR9220TRLPBF datasheet
 

Specifications of IRFR9220TRLPBF

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.5 Ohm @ 2.2A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C3.6AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs20nC @ 10VInput Capacitance (ciss) @ Vds340pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Transistor PolarityP Channel
Continuous Drain Current Id-3.6ADrain Source Voltage Vds-200V
On Resistance Rds(on)1.5ohmRds(on) Test Voltage Vgs-10V
Leaded Process CompatibleYesConfigurationSingle
Resistance Drain-source Rds (on)1.5 OhmsDrain-source Breakdown Voltage- 200 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current3.6 A
Power Dissipation2.5 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTFall Time19 ns
Minimum Operating Temperature- 55 CRise Time27 ns
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and
SiHFR9220-GE3
Halogen-free
IRFR9220PbF
Lead (Pb)-free
SiHFR9220-E3
IRFR9220
SnPb
SiHFR9220
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 50 V, Starting T
= 25 °C, L = 35 mH, R
DD
J
≤ - 3.9 A, dI/dt ≤ 95 A/μs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91283
S10-1139-Rev. D, 17-May-10
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
- 200
Definition
• Dynamic dV/dt Rating
1.5
• Repetitive Avalanche Rated
20
• Surface Mount (IRFR9220, SiHFR9220)
3.3
• Straight Lead (IRFUFU9220, SiHFU9220)
11
• Available in Tape and Reel
Single
• P-Channel
• Fast Switching
S
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third Power MOSFETs technology is the key to Vishay
G
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
D
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
P-Channel MOSFET
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
DPAK (TO-252)
a
SiHFR9220TRL-GE3
SiHFR9220TRR-GE3
a
IRFR9220TRLPbF
IRFR9220TRRPbF
a
SiHFR9220TL-E3
SiHFR9220TR-E3
a
IRFR9220TRL
IRFR9220TRR
a
SiHFR9220TL
SiHFR9220TR
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= - 3.6 A (see fig. 12).
g
AS
≤ 150 °C.
, T
J
Vishay Siliconix
DPAK (TO-252)
IPAK (TO-251)
a
a
SiHFR9220TR-GE3
SiHFU9220-GE3
a
a
IRFR9220TRPbF
IRFU9220PbF
a
a
SiHFR9220T-E3
SiHFU9220-E3
a
a
IRFR9220TR
IRFU9220
a
a
SiHFR9220T
SiHFU9220
SYMBOL
LIMIT
V
- 200
DS
V
± 20
GS
- 3.6
I
D
- 2.3
I
- 14
DM
0.33
0.020
E
310
AS
I
- 3.6
AR
E
4.2
AR
42
P
D
2.5
dV/dt
- 5.0
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRFR9220TRLPBF Summary of contents

  • Page 1

    ... The straight lead version (IRFU, SiHFU series) is for through-hole P-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. DPAK (TO-252) DPAK (TO-252) a SiHFR9220TRL-GE3 SiHFR9220TRR-GE3 a IRFR9220TRLPbF IRFR9220TRRPbF a SiHFR9220TL-E3 SiHFR9220TR-E3 a IRFR9220TRL IRFR9220TRR a SiHFR9220TL SiHFR9220TR = 25 ° ...

  • Page 2

    ... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91283 S10-1139-Rev. D, 17-May-10 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

  • Page 4

    ... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91283 S10-1139-Rev. D, 17-May-10 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91283 S10-1139-Rev. D, 17-May-10 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) d(off) ...

  • Page 6

    ... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

  • Page 7

    ... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91283. Document Number: 91283 S10-1139-Rev ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...