IRFR9220TRRPBF Vishay, IRFR9220TRRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR9220TRRPBF
• Description: MOSFET P-CH 200V 3.6A DPAK
• Manufacturer: Vishay

Specifications of IRFR9220TRRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 19 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 27 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
DS
T
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= - 160 V, V
MIN.
= 18 Ω, R
V
V
V
V
-
-
-
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
DS
GS
TEST CONDITIONS
= - 100 V, I
F
= - 50 V, I
= V
= - 200 V, V
= 0 V, I
= - 3.9 A, dI/dt = 100 A/μs
V
V
V
GS
DS
I
S
GS
D
D
GS
= - 3.6 A, V
= - 3.9 A, V
GS
= 24 Ω, see fig. 10
, I
= - 25 V,
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 μA
= - 250 μA
D
I
D
D
= - 2.2 A
GS
= - 3.9 A,
= - 2.2 A
D
TYP.
= - 1 mA
= 0 V
GS
-
-
-
J
DS
G
G
= 125 °C
= 0 V
= - 160 V,
b
D
S
b
b
b
D
S
b
- 200
MIN.
- 2.0
1.1
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
3.0
50
S10-1139-Rev. D, 17-May-10
Document Number: 91283
- 0.22
TYP.
0.97
340
110
150
8.8
7.3
4.5
7.5
33
27
19
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
- 100
- 500
- 4.0
- 3.6
- 6.3
- 14
300
1.5
3.3
2.0
S
20
11
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V