SI7409ADN-T1-E3 Vishay, SI7409ADN-T1-E3 Datasheet

MOSFET P-CH 30V 7A 1212-8

SI7409ADN-T1-E3

Manufacturer Part Number
SI7409ADN-T1-E3
Description
MOSFET P-CH 30V 7A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7409ADN-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 4.5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.019 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7409ADN-T1-E3TR
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated)
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
DS
- 30
(V)
8
3.30 mm
D
7
D
0.019 at V
0.031 at V
6
PowerPAK 1212-8
D
R
5
Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom View
DS(on)
D
GS
GS
= - 4.5 V
= - 2.5 V
(Ω)
1
J
a
S
= 150 °C)
a
2
S
P-Channel 30-V (D-S) MOSFET
3
S
a
3.30 mm
4
I
- 8.5
D
- 11
G
(A)
a
b, c
A
Q
= 25 °C, unless otherwise noted
Steady State
Steady State
g
T
T
T
T
(Typ.)
25
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• V
• 100 % R
• Load Switch
Symbol
Symbol
T
R
R
J
Available
Package with Low 1.07 mm Profile
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
DS
D
S
D
stg
Optimized for Load Switch
g
Tested
®
Power MOSFET
Typical
- 7.9
- 3.2
10 s
- 11
3.8
2.0
1.9
26
65
G
- 55 to 150
P-Channel MOSFET
± 12
- 30
- 40
260
Steady State
Maximum
S
D
- 1.3
1.5
0.8
2.4
- 7
- 5
33
81
Vishay Siliconix
Si7409ADN
www.vishay.com
®
°C/W
Unit
Unit
°C
W
V
A
1

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SI7409ADN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free) Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7409ADN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73246 S-83051-Rev. C, 29-Dec-08 4000 3200 2400 1600 °C J 0.8 1.0 1.2 Si7409ADN Vishay Siliconix C iss 800 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 0.8 ...

Page 4

... Si7409ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.4 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on) I Limited DM 10 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73246. Document Number: 73246 S-83051-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7409ADN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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