FDP55N06 | |
|---|---|
| Manufacturer Part Number | FDP55N06 |
| Description | MOSFET N-CH 60V 55A TO-220 |
| Manufacturer | Fairchild Semiconductor |
| Series | UniFET™ |
| FDP55N06 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
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FDP55N06 cross reference pin-to-pin replacement | ||||||
|---|---|---|---|---|---|---|
| Part number | Manufacturer | Vds | Id | Package | Configuration | Datasheet |
 AP9974BGP |
Advanced Power Electronics Corp. | 60V | 65A | TO-220 | Single N | AP9974BGP.pdf |
 AP9952GP-HF |
Advanced Power Electronics Corp. | 70V | 68A | TO-220 | Single N | AP9952GP-HF.pdf |
 AP9950GP |
Advanced Power Electronics Corp. | 70V | 70A | TO-220 | Single N | AP9950GP.pdf |
 AP9978AGP-HF |
Advanced Power Electronics Corp. | 60V | 66A | TO-220 | Single N | AP9978AGP-HF.pdf |
 AP9972GP-HF |
Advanced Power Electronics Corp. | 60V | 60A | TO-220 | Single N | AP9972GP-HF.pdf |
 AP9972AGP |
Advanced Power Electronics Corp. | 60V | 60A | TO-220 | Single N | AP9972AGP.pdf |
 AP9972AGP-HF |
Advanced Power Electronics Corp. | 60V | 60A | TO-220 | Single N | AP9972AGP-HF.pdf |
 AP9950AGP-HF |
Advanced Power Electronics Corp. | 68V | 70A | TO-220 | Single N | AP9950AGP-HF.pdf |
 AP9974AGP |
Advanced Power Electronics Corp. | 60V | 68A | TO-220 | Single N | AP9974AGP.pdf |
 AP60T06GP-HF |
Advanced Power Electronics Corp. | 55V | 46A | TO-220 | Single N | AP60T06GP-HF.pdf |
Specifications of FDP55N06 | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 22 mOhm @ 27.5A, 10V | Drain To Source Voltage (vdss) | 60V |
| Current - Continuous Drain (id) @ 25° C | 55A | Vgs(th) (max) @ Id | 4V @ 250µA |
| Gate Charge (qg) @ Vgs | 37nC @ 10V | Input Capacitance (ciss) @ Vds | 1510pF @ 25V |
| Power - Max | 114W | Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) | Configuration | Single |
| Transistor Polarity | N-Channel | Resistance Drain-source Rds (on) | 0.022 Ohms |
| Forward Transconductance Gfs (max / Min) | 33 S | Drain-source Breakdown Voltage | 60 V |
| Gate-source Breakdown Voltage | +/- 25 V | Continuous Drain Current | 55 A |
| Power Dissipation | 114 W | Maximum Operating Temperature | + 150 C |
| Mounting Style | Through Hole | Minimum Operating Temperature | - 55 C |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | ||
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top :
15.0 V
2
10
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
1
10
0
10
-1
0
10
10
V
, Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.05
0.04
0.03
V
= 10V
GS
0.02
0
25
50
75
100
I
, Drain Current [A]
D
Figure 5. Capacitance Characteristics
2500
C
2000
oss
C
iss
1500
1000
C
rss
500
0
-1
0
10
10
V
, Drain-Source Voltage [V]
DS
FDP55N06/FDPF55N06 Rev. A
Figure 2. Transfer Characteristics
2
10
1
25
10
* Notes :
1. 250
µ
s Pulse Test
o
2. T
= 25
C
C
0
10
1
10
2
Figure 4. Body Diode Forward Voltage
2
10
1
10
V
= 20V
GS
o
* Note : T
= 25
C
J
0
10
0.2
125
150
175
200
Figure 6. Gate Charge Characteristics
12
C
= C
+ C
(C
= shorted)
iss
gs
gd
ds
C
= C
+ C
oss
ds
gd
10
C
= C
rss
gd
8
6
* Note :
1. V
= 0 V
4
GS
2. f = 1 MHz
2
0
1
0
10
3
o
150
C
o
C
o
-55
C
* Notes :
1. V
= 30V
DS
2. 250
µ
s Pulse Test
4
6
8
V
, Gate-Source Voltage [V]
GS
Variation vs. Source Current
and Temperatue
o
150
C
o
25
C
* Notes :
1. V
= 0V
GS
µ
2. 250
s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Source-Drain voltage [V]
SD
V
= 30V
DS
V
= 48V
DS
* Note : I
= 55A
D
5
10
15
20
25
Q
, Total Gate Charge [nC]
G
www.fairchildsemi.com
10
1.8
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