MOSFET N-CH 60V 55A TO-220

 

FDP55N06

Manufacturer Part NumberFDP55N06
DescriptionMOSFET N-CH 60V 55A TO-220
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDP55N06 datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of FDP55N06

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs22 mOhm @ 27.5A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C55AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs37nC @ 10VInput Capacitance (ciss) @ Vds1510pF @ 25V
Power - Max114WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.022 Ohms
Forward Transconductance Gfs (max / Min)33 SDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 25 VContinuous Drain Current55 A
Power Dissipation114 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 5/10

Download datasheet (2Mb)Embed
PrevNext
Typical Performance Characteristics
Figure 11-1. Transient Thermal Response Curve for FDP55N06
0
10
-1
10
-2
10
-5
10
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
0
10
-1
10
-2
10
-5
10
FDP55N06/FDPF55N06 Rev. A
(Continued)
D=0.5
0.2
0.1
0.05
0.02
* Notes :
0.01
1. Z
? JC
2. Duty Factor, D=t
single pulse
3. T
JM
-4
-3
-2
-1
10
10
10
10
t
, Square W ave Pulse Duration [sec]
1
D =0.5
0.2
0.1
0.05
0.02
* N otes :
0.01
1. Z
(t) = 2.58
? JC
2. D uty F actor, D = t
3. T
- T
single pulse
JM
C
-4
-3
-2
-1
10
10
10
10
t
, S q uare W ave P ulse D uration [sec]
1
5
o
(t) = 1.1
C/W M ax.
/t
1
2
- T
= P
* Z
(t)
C
DM
? JC
0
1
10
10
o
C /W M ax.
/t
1
2
= P
* Z
(t)
D M
? JC
0
1
10
10
www.fairchildsemi.com