MOSFET N-CH 60V 55A TO-220

 

FDP55N06

Manufacturer Part NumberFDP55N06
DescriptionMOSFET N-CH 60V 55A TO-220
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDP55N06 datasheets

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Specifications of FDP55N06

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs22 mOhm @ 27.5A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C55AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs37nC @ 10VInput Capacitance (ciss) @ Vds1510pF @ 25V
Power - Max114WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.022 Ohms
Forward Transconductance Gfs (max / Min)33 SDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 25 VContinuous Drain Current55 A
Power Dissipation114 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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9.90
(8.70)
ø3.60
1.27
±0.10
2.54TYP
[2.54
]
±0.20
10.00
FDP55N06/FDPF55N06 Rev. A
TO-220
±0.20
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
]
±0.20
±0.20
8
4.50
±0.20
+0.10
1.30
–0.05
+0.10
0.50
2.40
±0.20
–0.05
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