SI4423DY-T1-E3 Vishay, SI4423DY-T1-E3 Datasheet

MOSFET P-CH 20V 10A 8-SOIC

SI4423DY-T1-E3

Manufacturer Part Number
SI4423DY-T1-E3
Description
MOSFET P-CH 20V 10A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4423DY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 14A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
900mV @ 600µA
Gate Charge (qg) @ Vgs
175nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0075 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-14A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4423DY-T1-E3TR

Available stocks

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Manufacturer
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Price
Part Number:
SI4423DY-T1-E3
Manufacturer:
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Quantity:
7 500
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SI4423DY-T1-E3
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SI4423DY-T1-E3
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Part Number:
SI4423DY-T1-E3
Manufacturer:
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Quantity:
20 000
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SI4423DY-T1-E3
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1 400
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Part Number:
SI4423DY-T1-E3
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Part Number:
SI4423DY-T1-E3
Quantity:
15 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72085
S09-0705-Rev. D, 27-Apr-09
Ordering Information: Si4423DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 20
(V)
G
S
S
S
0.0075 at V
0.0115 at V
0.009 at V
Si4423DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
R
DS(on)
T op V i e w
J
a
SO-8
= 150 °C)
GS
a
GS
GS
= - 2.5 V
(Ω)
= - 4.5 V
= - 1.8 V
P-Channel 20-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
D
= 25 °C, unless otherwise noted
- 14
- 13
- 12
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Compliant to RoHS Directive 2002/95/EC
• Game Station
G
Symbol
Symbol
T
R
R
J
Definition
TrenchFET
- Load Switch
V
V
I
P
, T
I
DM
thJA
thJF
I
P-Channel MOSFET
DS
GS
D
S
D
stg
S
D
®
Power MOSFET
Typical
- 11.5
- 2.7
10 s
- 14
3.0
1.9
33
70
16
- 55 to 150
- 20
- 50
± 8
Steady State
Maximum
- 1.36
0.95
- 10
1.5
- 8
42
84
21
Vishay Siliconix
Si4423DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4423DY-T1-E3

SI4423DY-T1-E3 Summary of contents

Page 1

... GS 0.0115 1 SO Ordering Information: Si4423DY-T1-E3 (Lead (Pb)-free) Si4423DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4423DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 72085 S09-0705-Rev. D, 27-Apr-09 12000 10000 = 100 125 0.030 0.024 0.018 0.012 °C J 0.006 0.000 0.8 1.0 1.2 Si4423DY Vishay Siliconix C iss 8000 6000 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1 ...

Page 4

... Si4423DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 * °C C Single Pulse 0.1 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72085. Document Number: 72085 S09-0705-Rev. D, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4423DY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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