SI7461DP-T1-E3 Vishay, SI7461DP-T1-E3 Datasheet

MOSFET P-CH 60V 8.6A PPAK 8SOIC

SI7461DP-T1-E3

Manufacturer Part Number
SI7461DP-T1-E3
Description
MOSFET P-CH 60V 8.6A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7461DP-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.5 mOhm @ 14.4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0145 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.6 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-12.6A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
190mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7461DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7461DP-T1-E3
Manufacturer:
TAIYO
Quantity:
40 000
Part Number:
SI7461DP-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI7461DP-T1-E3
Quantity:
1 170
Part Number:
SI7461DP-T1-E3
0
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72567
S10-2244-Rev. G, 04-Oct-10
Ordering Information: Si7461DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 60
8
6.15 mm
D
(V)
7
D
6
D
PowerPAK SO-8
Bottom View
5
0.0145 at V
Si7461DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.019 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
a
GS
GS
2
= - 4.5 V
S
()
= - 10 V
3
P-Channel 60 V (D-S) MOSFET
S
a
5.15 mm
4
G
a
b, c
- 14.4
- 12.6
A
I
D
= 25 °C, unless otherwise noted)
(A)
Steady State
Steady State
L = 1.0 mH
T
T
T
T
A
A
A
A
t  10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
Package with Low 1.07 mm Profile
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
®
Power MOSFETs
Typical
- 14.4
- 11.5
10 s
- 4.5
G
5.4
3.4
1.0
18
52
P-Channel MOSFET
- 55 to 150
± 20
- 60
- 60
125
260
50
D
S
Steady State
Maximum
- 8.6
- 6.9
- 1.6
1.9
1.2
1.3
23
65
Vishay Siliconix
®
Si7461DP
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI7461DP-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7461DP-T1-E3 (Lead (Pb)-free) Si7461DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7461DP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72567 S10-2244-Rev. G, 04-Oct- 100 125 °C J 0.8 1.0 1.2 Si7461DP Vishay Siliconix 8000 7000 C 6000 iss 5000 4000 3000 2000 C oss 1000 C rss Drain-to-Source V oltage (V) DS Capacitance 1 ...

Page 4

... Si7461DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 250 µ 100 125 150 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72567. Document Number: 72567 S10-2244-Rev. G, 04-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7461DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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