IRFD110 Vishay, IRFD110 Datasheet
IRFD110
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IRFD110 Summary of contents
Page 1
... W. HVMDIP IRFD110PbF SiHFD110-E3 IRFD110 SiHFD110 = 25 °C, unless otherwise noted ° 100 ° °C A for 2.0 A (see fig. 12 175 °C. J IRFD110, SiHFD110 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 1 0.71 I 8.0 DM 0.0083 E 140 ...
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... IRFD110, SiHFD110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...
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... 91127_03 = 25 °C A 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 20 µs Pulse Width T = 175 ° 91127_04 = 175 °C Fig Normalized On-Resistance vs. Temperature A IRFD110, SiHFD110 Vishay Siliconix 1 ° ° 175 µs Pulse Width - Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I = 5.6 A ...
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... IRFD110, SiHFD110 Vishay Siliconix 400 MHz iss rss gd 320 oss ds 240 C iss 160 C oss 80 C rss Drain-to-Source Voltage ( 91127_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 Total Gate Charge (nC) 91127_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91127_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Response 91127_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91127 S10-2466-Rev. C, 25-Oct-10 125 150 175 - 0 Rectangular Pulse Duration (s) 1 IRFD110, SiHFD110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFD110, SiHFD110 Vishay Siliconix Vary t to obtain p required I AS D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit 91127_12c Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 350 Top 300 Bottom 250 200 150 100 100 125 50 Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... SD • D.U.T. - device under test Period D = P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel IRFD110, SiHFD110 Vishay Siliconix + + P.W. Period www.vishay.com 7 ...
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... E min. 0.100 [2.54] typ. E max. INCHES MAX. 0.330 0.425 0.290 Package Information Vishay Siliconix 0.197 [5.00] 0.189 [4.80] 0.180 [4.57] 0.160 [4.06] 0.160 [4.06] 0.140 [3.56] 0.024 [0.60 0.020 [0.51] MILLIMETERS MIN. MAX. 7.87 8 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...