IRFD014 Vishay, IRFD014 Datasheet

MOSFET N-CH 60V 1.7A 4-DIP

IRFD014

Manufacturer Part Number
IRFD014
Description
MOSFET N-CH 60V 1.7A 4-DIP
Manufacturer
Vishay
Datasheet

Specifications of IRFD014

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
310pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD014

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91125
S-81263-Rev. A, 21-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 10 A, dI/dt ≤ 90 A/µs, V
= 25 V, starting T
D
(Ω)
HEXDIP
S
a
G
J
= 25 °C, L = 52 mH, R
c
DD
b
V
≤ V
GS
DS
= 10 V
G
, T
N-Channel MOSFET
J
≤ 175 °C.
Single
3.1
5.8
60
11
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.20
GS
AS
at 10 V
= 1.7 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
HEXDIP
IRFD014PbF
SiHFD014-E3
IRFD014
SiHFD014
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
IRFD014, SiHFD014
design,
- 55 to + 175
0.0083
LIMIT
300
± 20
130
1.7
1.2
1.3
4.5
60
14
low
d
Vishay Siliconix
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

Related parts for IRFD014

IRFD014 Summary of contents

Page 1

... W. HEXDIP IRFD014PbF SiHFD014-E3 IRFD014 SiHFD014 = 25 °C, unless otherwise noted ° 100 ° °C C for Ω 1.7 A (see fig. 12 ≤ 175 °C. J IRFD014, SiHFD014 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT ± 1 1 0.0083 E 130 AS P 1.3 D dV/dt 4 ...

Page 2

... IRFD014, SiHFD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91125 S-81263-Rev. A, 21-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 175 °C C IRFD014, SiHFD014 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFD014, SiHFD014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91125 S-81263-Rev. A, 21-Jul-08 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91125 S-81263-Rev. A, 21-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFD014, SiHFD014 Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFD014, SiHFD014 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91125 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFD014, SiHFD014 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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