IRFD9014 Vishay, IRFD9014 Datasheet

MOSFET P-CH 60V 1.1A 4-DIP

IRFD9014

Manufacturer Part Number
IRFD9014
Description
MOSFET P-CH 60V 1.1A 4-DIP
Manufacturer
Vishay
Datasheet

Specifications of IRFD9014

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 660mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.1A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD9014

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFD9014
Manufacturer:
IR
Quantity:
6 370
Part Number:
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Manufacturer:
IR
Quantity:
4 070
Part Number:
IRFD9014
Manufacturer:
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4 082
Part Number:
IRFD9014PBF
Manufacturer:
ST
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8 529
Part Number:
IRFD9014PBF
Manufacturer:
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Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91136
S10-2463-Rev. C, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 6.7 A, dI/dt  90 A/μs, V
= - 25 V, starting T
()
D
HVMDIP
a
S
a
G
J
= 25 °C, L = 33 mH, R
c
a
b
V
DD
GS
 V
= - 10 V
DS
, T
G
Single
J
P-Channel MOSFET
- 60
 175 °C.
3.8
5.1
12
g
A
= 25 , I
= 25 °C, unless otherwise noted)
Power MOSFET
S
D
V
0.50
GS
at - 10 V
AS
= - 2.2 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRFD9014PbF
SiHFD9014-E3
IRFD9014
SiHFD9014
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
IRFD9014, SiHFD9014
design,
- 55 to + 175
0.0083
LIMIT
- 0.80
300
± 20
- 1.1
- 8.8
- 1.1
0.13
- 4.5
- 60
140
1.3
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFD9014 Summary of contents

Page 1

... W. HVMDIP IRFD9014PbF SiHFD9014-E3 IRFD9014 SiHFD9014 = 25 °C, unless otherwise noted ° 100 ° °C A for  2.2 A (see fig. 12  175 ° IRFD9014, SiHFD9014 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT ± 1 0. 8.8 DM 0.0083 E 140 1 ...

Page 2

... IRFD9014, SiHFD9014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted °C A Fig Typical Output Characteristics 175 °C A Fig Typical Output Characteristics, T Document Number: 91136 S10-2463-Rev. C, 08-Nov- °C Fig Typical Transfer Characteristics A = 175 °C Fig Normalized On-Resistance vs. Temperature A IRFD9014, SiHFD9014 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFD9014, SiHFD9014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91136 S10-2463-Rev. C, 08-Nov-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91136 S10-2463-Rev. C, 08-Nov- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms t , Rectangular Pulse Duration (s) 1 IRFD9014, SiHFD9014 Vishay Siliconix D.U. d(on) r ...

Page 6

... IRFD9014, SiHFD9014 Vishay Siliconix Vary t to obtain p required I AS D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices Fig For P-Channel IRFD9014, SiHFD9014 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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